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2SC4137 データシート(PDF) 1 Page - Rohm |
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2SC4137 データシート(HTML) 1 Page - Rohm |
1 / 3 page 1/2 www.rohm.com ○ c 2009 ROHM Co., Ltd. All rights reserved. 2009.12 - Rev.C High frequency amplifier transistor, RF switching (6V, 50mA) 2SC4774 / 2SC4713K Features Dimensions (Unit : mm) 1) Very low output-on resistance (Ron). 2) Low capacitance. Absolute maximum ratings (Ta=25 C) Parameter Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 12 6 3 50 0.2 150 −55 to +150 Unit V V V mA W °C °C Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Packaging specifications and hFE Type 2SC4774 UMT3 S BM ∗ T106 3000 2SC4713K SMT3 S BM ∗ T146 3000 ∗Denotes hFE Package hFE Marking Code Basic ordering unit (pieces) Electrical characteristics (Ta=25 C) Parameter Symbol Min. Typ. Max. Unit Conditions BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob 12 6 3 − − − 180 300 − − − − − − − − 800 1 − − − 0.5 0.5 0.3 560 − 1.7 V V V μA μA V − MHz pF IC =10μA IC =1mA IE =10μA VCB =10V VEB =2V IC/IB =10mA/1mA VCE/IC =5V/5mA VCE =5V, IE= −10mA, f=200MHz VCB =10V, IE=0A, f=1MHz Ron − 2 −Ω IB =3mA, VI=100mVrms, f=500kHz Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Output-on resistance This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. 0.2 0.15 0.9 0.7 0.3 (3) 0.65 (2) 2.0 1.3 (1) 0.65 (2) (1) 0.4 (3) 2.9 1.9 0.95 0.95 0.8 0.15 1.1 2SC4774 ROHM : UMT3 EIAJ : SC-70 ROHM : SMT3 EIAJ : SC-59 2SC4713K (1) Emitter (2) Base (3) Collector Each lead has same dimensions (1) Emitter (2) Base (3) Collector Each lead has same dimensions |
同様の部品番号 - 2SC4137 |
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同様の説明 - 2SC4137 |
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