2SD1918_09 datasheet(1/3 Pages) ROHM

部品番号	2SD1918

部品情報	Power Transistor (160V , 1.5A)

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メーカー	ROHM [Rohm]

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c

2009.12 - Rev.B

Power Transistor (160V , 1.5A)

2SD1918 / 2SD1857A

Features

Dimensions (Unit : mm)

1) High breakdown voltage.(BVCEO=160V)

2) Low collector output capacitance.

(Typ. 20pF at VCB=10V)

3) High transition frequency.(fT=80MHZ)

4) Complements the 2SB1236A.

Absolute maximum ratings (Ta = 25

°C)

Parameter

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Limits

160

5

1.5

1

150

−55 ∼+150

Unit

V

A(DC)

3

∗2

∗1

A(Pulse)

W

1

10

W(Tc

=25°C)

2SD1857A

2SD1918

°C

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector

power

dissipation

Junction temperature

Storage temperature

1 Pw

=200msec duty=1/2

2

Printed circuit board 1.7mm thick, collector plating 1cm

2 or larger.

∗

Packaging specifications and hFE

Type

2SD1918

CPT3

QR

TL

2500

2SD1857A

ATV

PQ

TV2

2500

−−

Denotes hFE

Package

hFE

Code

Basic ordering unit (pieces)

Marking

*

Electrical characteristics (Ta = 25

°C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

BVCBO

BVCEO

BVEBO

ICBO

IEBO

VCE(sat)

fT

Cob

160

5

−

120

−

80

20

−

1

2

390

−

V

µA

V

−

hFE

82

−

270

−

2SD1918

2SD1857A

MHz

pF

IC

= 50

µA

IC

= 1mA

IE

= 50

µA

VCB

= 120V

VEB

= 4V

IC/IB

= 1A/0.1A

VBE(sat)

−

1.5

V

IC/IB

= 1A/0.1A

VCE/IC

= 5V/0.1A

VCE

= 5V , IE = −0.1A , f = 30MHz

VCB

= 10V , IE = 0A , f = 1MHz

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

DC current

transfer ratio

Transition frequency

Output capacitance

Base-emitter saturation voltage

Measured using pulse current.

∗

EIAJ : SC-63

ROHM : CPT3

ROHM : ATV

2SD1857A

2SD1918

0.45

(2) Collector

1.05

(3) Base

Taping specifications

(1) Emitter

0.5

(1)

0.65Max.

2.54

(2)

2.54

(3)

6.8

2.5

9.5

2.5

0.8Min.

1.5

C0.5

0.9

1.5

5.5

(3) Emitter(Source)

(2) Collector(Drain)

(1) Base(Gate)

同様の部品番号 - 2SD1918_09

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同様の説明 - 2SD1918_09

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Rohm	2SD1918	149Kb / 3P	Power Transistor (160V , 1.5A)
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