2SD2150_09 datasheet(1/3 Pages) ROHM

部品番号	2SD2150

部品情報	Low Frequency Transistor (20V, 3A)

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2009.11 - Rev.B

Low Frequency Transistor (20V, 3A)

2SD2150

Features

Dimensions(Unit : mm)

1) Low VCE(sat).

VCE(sat) = 0.2V(Typ.)

（

IC / IB = 2A / 0.1A）

2) Excellent current gain characteristics.

3) Complements the 2SB1424.

Structure

Epitaxial planar type

NPN silicon transistor

Absolute maximum ratings (Ta=25

°C)

Parameter

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

40

V

A (DC)

W

°C

20

6

3

A (Pulse)

5

0.5

2

∗1

∗2

150

−55 to +150

Symbol

Limits

Unit

∗1 Single pulse Pw=10ms

∗2 Mounted on a 40×40×0.7mm Ceramic substrate.

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Electrical characteristics (Ta=25

°C)

Parameter

Symbol

BVCBO

BVCEO

BVEBO

ICBO

IEBO

hFE

VCE(sat)

fT

Cob

Min.

40

20

6

−

120

−

0.2

290

25

−

0.1

560

0.5

−

VIC

=50

µA

IC

=1mA

IE

=50

µA

VCB

=30V

VEB

=5V

VCE

=2V, IC=0.1A

IC/IB

=2A/0.1A

VCE

=2V, IE= −0.5A, f=100MHz

VCE

=10V, IE=0A, f=1MHz

V

µA

−

V

∗

MHz

pF

Typ.

Max.

Unit

Conditions

∗ Measured using pulse current.

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

DC current transfer ratio

Collector-emitter saturation voltage

Transition frequency

Output capacitance

2SD2150

(1) Base

(2) Collector

(3) Emitter

ROHM : MPT3

EIAJ : SC-62

−0.05

+0.1

−0.1

+0.2

−0.1

(3)

(2)

(1)

3.0

±0.2

1.5

±0.1

1.5

±0.1

0.4

±0.1

0.5

±0.1

0.4

±0.1

0.4

1.5

4.5

1.6

±0.1

∗ Denotes hFE

Abbreviated symbol: CF

∗

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