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BAXXDD0W データシート(PDF) 7 Page - Rohm |
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BAXXDD0W データシート(HTML) 7 Page - Rohm |
7 / 10 page Technical Note BA□□DD0 Series,BA□□CC0 Series, BA□□DD0W Series,BA□□CC0W Series 7/9 www.rohm.com 2010.02 - Rev.B © 2010 ROHM Co., Ltd. All rights reserved. ● Vo Terminal Fig.32 Output Equivalent Circuit Fig.33 ESR-Io Characteristics Fig.34 ESR vs Io Characteristics (BA□□CC0) (B A□□DD0) Please attach an anti-oscillation capacitor between Vcc and GND. The capacitance of the capacitor may significantly change due to factors such as temperature changes, making it impossible to completely stop oscillations. Please use a tantalum capacitor or aluminum electrolysis capacitor with favorable characteristics and small internal series resistance (ESR) even at low temperatures. The output fluctuates regardless of whether the ESR is large or small. Please use the IC within the stable operating region while referring to the ESR characteristics reference data shown in Figs.32 through 34. In applications where there are sudden load fluctuations, the use of a capacitor with large capacitance is recommended. ● Other Points of Caution 1)Protection Circuits Over-current Protection Circuit A built-in over-current protection circuit corresponding to the current capacity prevents the destruction of the IC when there are load shorts. This protection circuit is a “7”-shaped current control circuit that is designed such that the current is restricted and does not latch even when a large current momentarily flows through the system with a high-capacitance capacitor. However, while this protection circuit is effective for the prevention of destruction due to unexpected accidents, it is not suitable for continuous operation or transient use. Please be aware when creating thermal designs that the overcurrent protection circuit has negative current capacity characteristics with regard to temperature (Refer to Figs.4 and 16). Thermal Shutdown Circuit (Thermal Protection) This system has a built-in temperature protection circuit for the purpose of protecting the IC from thermal damage. As shown above, this must be used within the range of acceptable loss, but if the acceptable loss happens to be continuously exceeded, the chip temperature Tj increases, causing the temperature protection circuit to operate. When the thermal shutdown circuit operates, the operation of the circuit is suspended. The circuit resumes operation immediately after the chip temperature Tj decreases, so the output repeats the ON and OFF states (Please refer to Figs.12 and 24 for the temperatures at which the temperature protection circuit operates). There are cases in which the IC is destroyed due to thermal runaway when it is left in the overloaded state. Be sure to avoid leaving the IC in the overloaded state. Reverse Current In order to prevent the destruction of the IC when a reverse current flows through the IC, it is recommended that a diode be placed between the Vcc and Vo and a pathway be created so that the current can escape (Refer to Fig.35). 2) This IC is bipolar IC that has a P-board (substrate) and P+ isolation layer between each devise, as shown in Fig.36. A P-N junction is formed between this P-layer and the N-layer of each device, and the P-N junction operates as a parasitic diode when the electric potential relationship is GND> Terminal A, GND> Terminal B, while it operates as a parasitic transistor when the electric potential relationship is Terminal B GND> Terminal A. Parasitic devices are structurally inevitable in the IC. The operation of parasitic devices induces mutual interference between circuits, causing malfunctions and eventually the destruction of the IC. It is necessary to be careful not to use the IC in ways that would cause parasitic elements to operate. For example, applying a voltage that is lower than the GND (P-board) to the input terminal. 200 400 800 1000 0.1 1 10 Stable operating region 100 0 600 Unstable operating region Unstable operating region 1 0.1 1 10 100 10 100 1000 OUTPUT CURRENT:lo(mA) OUTPUT CURRENT:lo(mA) Unstable operating region Unstable operating region Stable operating region OUT 22μF IC GND N P N P+ P+ Parasitic element or transistor (Pin B) B E Transistor (NPN) N P N GND O (Pin A) GND N P+ Resistor Parasitic element P N P P+ N (Pin A) Parasitic element or transistor (Pin B) GND C B E Parasitic element GND Fig. 36:Bypass diode OUT Vcc CTL GND Reverse current Fig. 37: Example of the basic structure of a bipolar IC |
同様の部品番号 - BAXXDD0W |
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