FDS8949 datasheet(4/6 Pages) FAIRCHILD

部品番号	FDS8949

部品情報	Dual N-Channel Logic Level PowerTrench짰 MOSFET

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メーカー	FAIRCHILD [Fairchild Semiconductor]

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4 / 6 page

FDS8949

_F085 Rev. A

www.fairchildsemi.com

4

Figure 7.

048

12

16

0

2

4

6

8

10

VDD = 30V

VDD = 10V

Qg, GATE CHARGE(nC)

VDD = 20V

Gate Charge Characteristics

Figure 8.

0.1

1

10

1

10

2

10

3

f = 1MHz

VGS = 0V

VDS, DRAIN TO SOURCE VOLTAGE (V)

Crss

Coss

Ciss

40

Capacitance vs Drain to Source Voltage

Figure 9.

10

-3

10

-2

10

-1

10

0

10

1

10

2

10

3

0.1

1

10

TJ = 25oC

TJ = 125oC

t

AV, TIME IN AVALANCHE(ms)

Unclamped Inductive Switching

Capability

Figure 10.

25

50

75

100

125

150

0

1

2

3

4

5

6

7

RθJA = 81

o

C/W

TA, Ambient TEMPERATURE (oC)

VGS = 4.5V

VGS = 10V

Maximum Continuous Drain Current vs

Ambient Temperature

Figure 11.

0.01

0.1

1

10

100

0.01

0.1

1

10

100

300

DC

10s

1s

100ms

10ms

1ms

100us

LIMITED BY

PACKAGE

SINGLE PULSE

TJ = MAX RATED

TA = 25oC

OPERATION IN THIS

AREA MAY BE

LIMITED BY rDS(on)

VDS, DRAIN-SOURCE VOLTAGE (V)

Forward Bias Safe Operating Area

Figure 12. Single Pulse Maximum Power

Dissipation

10

-4

10

-3

10

-2

10

-1

10

0

10

1

10

2

10

3

1

10

100

0.7

V

GS = 10V

SINGLE PULSE

t, PULSE WIDTH (s)

SINGLE PULSE

RθJA = 135°C/W

TA = 25°C

Typical Characteristics T

J = 25°C unless otherwise noted

同様の部品番号 - FDS8949

メーカー	部品番号	データシート	部品情報
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Fairchild Semiconductor	FDS8949_F085	544Kb / 6P	Dual N-Channel Logic Level PowerTrench MOSFET

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