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FDS9431A データシート(PDF) 1 Page - Fairchild Semiconductor |
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FDS9431A データシート(HTML) 1 Page - Fairchild Semiconductor |
1 / 5 page Features • -3.5 A, -20 V. R DS(ON) = 0.130 Ω @ VGS = -4.5 V R DS(ON) = 0.180 Ω @ VGS = -2.5 V. • Fast switching speed. • High density cell design for extremely low R DS(ON). • High power and current handling capability. Absolute Maximum Ratings TA=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage -20 V VGSS Gate-Source Voltage ±8 V ID Drain Current - Continuous (Note 1a) -3.5 A - Pulsed -18 Power Dissipation for Single Operation (Note 1a) 2.5 (Note 1b) 1.2 PD (Note 1c) 1.0 W TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C Thermal Characteristics RqJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W RqJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS9431A FDS9431A_F085 13’’ 12mm 2500 units FDS9431A_F085 P-Channel 2.5V Specified MOSFET General Description This P-Channel 2.5V specified MOSFET is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Applications • DC/DC converter • Power management • Load switch • Battery protection S D S S SO-8 D D D G 5 6 8 3 1 7 4 2 ©20 10 Fairchild Semiconductor Corporation FDS 9431A_F085 Rev. A www.fairchildsemi.com 1 • Qualified to AEC Q101 • RoHS Compliant tm February 2010 |
同様の部品番号 - FDS9431A |
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同様の説明 - FDS9431A |
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