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BC856 データシート(PDF) 1 Page - Rectron Semiconductor |
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BC856 データシート(HTML) 1 Page - Rectron Semiconductor |
1 / 2 page mA **Mounted on a ceramic substrate of 8mm x 10mm x 0.7mm Thermal Resistance Collector Base Voltage Storge Temperature Tstg mW Tamb = 60 oC Junction Temperature Tj 150 oC Total power dissipation up to Ptot** DESCRIPTION SYMBOL UNITS Collector Emmitter Voltage (+VBE = 1V) V 5V IEM IC mA ICM mA V V 80 50 30 Emitter Base Voltage VEBO Emitter Current - Peak Collector Current (DC) Base Current - Peak IBM Collector Current - Peak VCBO VCEX Collector Emitter Voltage VCEO BC856 200 100 200 65 45 BC857 BC858 30 250 80 50 30 200 From soldering points to ambient Rth(s-a)** 90 -55 to +150 oC From tab to soldering points Rth(t-s) 280 From junction to tab Rth(j-t) 60 K/W PNP Silicon Planar Epitaxial Transistors BC856 BC857 BC858 Unit: inch (mm) Pin configuration: 1. BASE 2. EMITTER 3. COLLECTOR 1 3 2 Absolute Maximum Ratings (Ta = 25 oC unless specified otherwise) www.rectron.com 1 of 2 |
同様の部品番号 - BC856 |
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同様の説明 - BC856 |
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