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BCW30 データシート(PDF) 1 Page - Rectron Semiconductor |
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BCW30 データシート(HTML) 1 Page - Rectron Semiconductor |
1 / 2 page FEATURES MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-O rate flame retardant * Lead: MIL-STD-202E method 208C guaranteed * Mounting position: Any * Weight: 0.008 gram SOT-23 BCW30 Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 OC ambient temperature unless otherwise specified. 0.118(3.00) 0.012(0.30) 0.020(0.50) 0.003(0.08) 0.006(0.15) 0.110(2.80) 0.019(2.00) 0.071(1.80) 0.100(2.55) 0.089(2.25) 0.020(0.50) 0.012(0.30) 0.043(1.10) 0.035(0.90) 0.004(0.10) 0.000(0.00) SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP) 2007-3 ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted ) DC current gain (VCE= -5V, IC= -2mA) Collector cut-off current (VCB= -32V, IE=0) Collector cut-off current (VCE= -30V, IB=0) Collector cut-off current (VEB= -5V, IC=0) Collector-emitter saturation voltage (IC= -10mA, IB= -0.5mA) Base-emitter voltage (IC= -2mA, VCE= -5V) CHARACTERISTICS SYMBOL UNITS - - - - -0.1 -0.1 m A m A m A V V V V V Collector-base breakdown voltage (IC= -10mA, IE=0) Collector-emitter breakdown voltage (IC= -2mA, IB=0) Emitter-base breakdown voltage (IE= -10mA, IC=0) CLASSIFICATION OF hFE RANK Range Marking C2X L 215-350 V(BR)CBO V(BR)CEO V(BR)EBO IEBO hFE ICBO ICEO VCE(sat) VBE(on) H MAX - - - - - - - TYP -32 -32 -5 - 215 MIN 350-500 0.055(1.40) 0.047(1.20) - - -0.1 - - - -0.75 -0.3 - 500 BASE EMITTER COLLECTOR * * * * Power dissipation PCM : 0.225 W (Tamb=25OC) Collector current ICM : -0.1 A Collector-base voltage V(BR)CBO : -32 V Operating and storage junction temperature range TJ,Tstg: -55OC to +150OC 1 1 2 3 2 3 Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Note ; “Fully ROHS compliant”, “100% Sn plating (Pb-free)”. |
同様の部品番号 - BCW30 |
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同様の説明 - BCW30 |
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