IRF8513PbF

4

www.irf.com

Q1 - Control FET

Q2 - Synchronous FET

Typical Characteristics

Fig 7. Typical Capacitance vs. Drain-to-Source Voltage Fig 8. Typical Capacitance vs. Drain-to-Source Voltage

Fig 9. Typical Gate Charge vs. Gate-to-Source Voltage

Fig 10. Typical Gate Charge vs. Gate-to-Source

Voltage

Fig 11. Maximum Safe Operating Area

Fig 12. Maximum Safe Operating Area

1

10

100

VDS, Drain-to-Source Voltage (V)

10

100

1000

10000

VGS = 0V,

f = 1 MHZ

Ciss = Cgs + Cgd, C ds SHORTED

Crss = Cgd

Coss = Cds + Cgd

Coss

Crss

Ciss

0246

8

10

12

14

16

QG, Total Gate Charge (nC)

0.0

2.0

4.0

6.0

8.0

10.0

12.0

14.0

VDS= 24V

VDS= 15V

ID= 6.4A

1

10

100

VDS, Drain-to-Source Voltage (V)

10

100

1000

10000

VGS = 0V,

f = 1 MHZ

Ciss = Cgs + Cgd, C ds SHORTED

Crss = Cgd

Coss = Cds + Cgd

Coss

Crss

Ciss

02468

10 12 14 16 18 20

QG, Total Gate Charge (nC)

0.0

2.0

4.0

6.0

8.0

10.0

12.0

14.0

VDS= 24V

VDS= 15V

ID= 8.6A

0

1

10

100

VDS, Drain-to-Source Voltage (V)

0.1

1

10

100

1000

OPERATION IN THIS AREA

LIMITED BY R DS(on)

TA = 25°C

Tj = 175°C

Single Pulse

100µsec

1msec

10msec

0

1

10

100

VDS, Drain-to-Source Voltage (V)

0.1

1

10

100

1000

OPERATION IN THIS AREA

LIMITED BY R DS(on)

TA = 25°C

Tj = 175°C

Single Pulse

100µsec

1msec

10msec