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SS6730-18CQTR データシート(PDF) 10 Page - Silicon Standard Corp.

部品番号 SS6730-18CQTR
部品情報  150mA Low-Noise, Low-Dropout Linear Regulator
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メーカー  SSC [Silicon Standard Corp.]
ホームページ  http://www.siliconstandard.com
Logo SSC - Silicon Standard Corp.

SS6730-18CQTR データシート(HTML) 10 Page - Silicon Standard Corp.

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SS6730
POWER DISSIPATION
The maximum dissipation of the SS6730
depends on the thermal resistance of the case
and circuit board, the temperature difference
between the die junction and ambient air, and
the rate of air flow. The rate of temperature rise
is
greatly
affected
by
the
mounting
pad
configuration on the PCB, the board material,
and the ambient temperature. When the IC
mounting with good thermal conductivity is used,
the junction will be low even if the power
dissipation is great.
The power dissipation across the device is
P = IOUT (VIN-VOUT).
The maximum power dissipation is:
)
R?
(R?
)
T
(T
P
BA
JB
A
J
MAX
+
=
where
TJ-TA is the temperature difference
between the die junction and the surrounding air,
R
θ
JB is the thermal resistance
of the package,
and R
θ
BA is the thermal resistance through the
PCB, copper traces, and other materials to the
surrounding air.
As a general rule, the lower the temperature,
the better the reliability of the device, so the
PCB mounting pad should provide maximum
thermal conductivity to maintain low device
temperature.
The GND pin performs the dual function of
providing an electrical connection to ground and
channeling heat away. Therefore, connecting the
GND pin to ground with a large pad or ground
plane would increase the power dissipation and
reduce the device temperature.
50
100
150
0.01
0.1
1
10
100
STABLE REGION
COUT=1µF
IOUT (mA)
Fig. 20 Max Power Dissipation, COUT=1µF
50
100
150
0.01
0.1
1
10
100
Stable Region
COUT=2.2µF
IOUT (mA)
Fig. 21 Max Power Dissipation, COUT=2.2µF
50
100
150
0.01
0.1
1
10
100
Stable Region
COUT=3.3µF
IOUT (mA)
Fig. 22 Max Power Dissipation, COUT=3.3µF
50
100
150
0.01
0.1
1
10
100
Stable Region
COUT=10µF
IOUT (mA)
Fig. 23 Max Power Dissipation, COUT=10µF
1/26/2004 Rev.2.02


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