BCW66 datasheet(2/2 Pages) ZETEX

部品番号	BCW66

部品情報	NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

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ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN.

TYP.

MAX. UNIT CONDITIONS.

Collector-Emitter

Breakdown Voltage

V(BR)CEO 45

V

ICEO=10mA

V(BR)CES 75

V

IC=10

µA

Emitter-Base Breakdown Voltage

V(BR)EBO

5V

IEBO =10µA

Collector-Emitter

Cut-off Current

ICES

20

nA

µA

VCES = 45V

VCES= 45V,Tamb=150°C

Emitter-Base Cut-Off Current

IEBO

20

nA

VEBO =4V

Collector-Emitter Saturation

Voltage

VCE(sat)

0.3

0.7

V

IC=100mA, IB = 10mA

IC= 500mA, IB = 50mA*

Base-Emitter Saturation Voltage

VBE(sat)

2V

IC=500mA, IB=50mA*

Static

Forward

Current

Transfer

BCW66F hFE

75

100

35

160

250

IC= 10mA, VCE

= 1V

IC=100mA, VCE= 1V*

IC=500mA, VCE= 2V*

BCW66G hFE

110

160

60

250

400

IC= 10mA, VCE

= 1V

IC=100mA, VCE= 1V*

IC=500mA, VCE= 2V*

BCW66H hFE

180

250

100

350

630

IC= 10mA, VCE

= 1V

IC=100mA, VCE= 1V*

IC=500mA, VCE= 2V*

Transition Frequency

fT

100

MHz IC =20mA, VCE =10V

f = 100MHz

Output Capacitance

Cobo

8

12

pF

VCB =10V, f =1MHz

Input Capacitance

Cibo

80

pF

VEB =0.5V, f =1MHz

Noise Figure

N

2

10

dB

IC= 0.2mA, VCE= 5V

RG =1kΩ

Switching times:

Turn-On Time

Turn-Off Time

ton

toff

100

400

ns

IC=150mA

IB1=- IB2 =15mA

RL=150Ω

Spice parameter data is available upon request for this device

*Measured under pulsed conditions.

BCW66

TBA

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