BF620 datasheet(1/1 Pages) ZETEX

部品番号	BF620

部品情報	NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR

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SOT89 NPN SILICON PLANAR

HIGH VOLTAGE TRANSISTOR

ISSUE 5 – MARCH 2001

✪

FEATURES

*

High breakdown and low saturation voltages

APPLICATIONS

*

Suitable for video output stages in TV sets

*

Switching power supplies

COMPLEMENTARY TYPE:

BF621

PARTMARKING DETAIL –

DC

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

300

V

Collector-Emitter Voltage

VCEO

300

V

Emitter-Base Voltage

VEBO

5V

Peak Pulse Current

ICM

100

mA

Continuous Collector Current

IC

50

mA

Power Dissipation at Tamb=25°C

Ptot

1W

Operating and Storage Temperature Range

Tj:Tstg

-65 to +150

°C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL

MIN.

MAX.

UNIT

CONDITIONS.

Collector-Base

Breakdown Voltage

V(BR)CBO

300

V

IC=10µA, IE=0

Collector-Emitter

Breakdown Voltage

V(BR)CEO

300

V

IC=1mA, IB=0*

Emitter-Base Breakdown

Voltage

V(BR)EBO

5V

IE=100µA, IC=0

Collector Cut-Off Current

ICBO

10

20

nA

µA

VCB=200V, IE=0

VCB=200V, IE=0 †

Colector Cut-Off Current

ICER

50

10

nA

µA

VCE=200V, RBE=2.7KΩ

VCE=200V, RBE=2.7KΩ †

Emitter Cut-Off Current

IEBO

10

µA

VEB=5V, IC=0

Collector-Emitter

Saturation Voltage

VCE(sat)

0.6

V

IC=30mA, IB=5mA*

Base-Emitter

Saturation Voltage

VBE(sat)

0.9

V

IC=20mA, IB=2mA*

Static Forward

Current Transfer Ratio

hFE

50

IC=25mA, VCE=20V*

Transition Frequency

fT

100 Typical

MHz

IC=10mA, VCE=10V

f=100MHz

Output Capacitance

Cobo

0.8 Typical

pF

VCB=30V, f=1MHz

†Tamb=150°C

*Measured under pulsed conditions.

For typical characteristics graphs see FMMTA42 datasheet.

BF620

C

B

E

SOT89

TBA

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