74AUP1G38GF datasheet(1/15 Pages) NXP

部品番号	74AUP1G38GF

部品情報	Low-power 2-input NAND gate (open drain)

Download	15 Pages

Scroll/Zoom	100%

メーカー	NXP [NXP Semiconductors]

ホームページ	http://www.nxp.com

Logo

1 / 15 page

1.

General description

The 74AUP1G38 provides the single 2-input NAND gate with open-drain output. The

output of the device is an open drain and can be connected to other open-drain outputs to

implement active-LOW wired-OR or active-HIGH wired-AND functions.

Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall

times across the entire VCC range from 0.8 V to 3.6 V.

This device ensures a very low static and dynamic power consumption across the entire

VCC range from 0.8 V to 3.6 V.

This device is fully speciﬁed for partial Power-down applications using IOFF.

The IOFF circuitry disables the output, preventing the damaging backﬂow current through

the device when it is powered down.

2.

Features

I Wide supply voltage range from 0.8 V to 3.6 V

I High noise immunity

I Complies with JEDEC standards:

N JESD8-12 (0.8 V to 1.3 V)

N JESD8-11 (0.9 V to 1.65 V)

N JESD8-7 (1.2 V to 1.95 V)

N JESD8-5 (1.8 V to 2.7 V)

N JESD8-B (2.7 V to 3.6 V)

I ESD protection:

N HBM JESD22-A114E Class 3A exceeds 5000 V

N MM JESD22-A115-A exceeds 200 V

N CDM JESD22-C101C exceeds 1000 V

I Low static power consumption; ICC = 0.9 µA (maximum)

I Latch-up performance exceeds 100 mA per JESD 78 Class II

I Inputs accept voltages up to 3.6 V

I Low noise overshoot and undershoot < 10 % of VCC

I IOFF circuitry provides partial Power-down mode operation

I Multiple package options

I Speciﬁed from −40 °Cto+85 °C and −40 °C to +125 °C

74AUP1G38

Low-power 2-input NAND gate (open drain)

Rev. 03 — 22 June 2009

Product data sheet

同様の部品番号 - 74AUP1G38GF

メーカー	部品番号	データシート	部品情報
Nexperia B.V. All right...	74AUP1G38GM	269Kb / 18P	Low-power 2-input NAND gate (open drain) Rev. 9 - 16 August 2022
	74AUP1G38GN	269Kb / 18P	Low-power 2-input NAND gate (open drain) Rev. 9 - 16 August 2022
	74AUP1G38GS	269Kb / 18P	Low-power 2-input NAND gate (open drain) Rev. 9 - 16 August 2022
	74AUP1G38GW	269Kb / 18P	Low-power 2-input NAND gate (open drain) Rev. 9 - 16 August 2022
	74AUP1G38GX	269Kb / 18P	Low-power 2-input NAND gate (open drain) Rev. 9 - 16 August 2022

メーカー	部品番号	データシート	部品情報
Nexperia B.V. All right...	74AUP1G38	269Kb / 18P	Low-power 2-input NAND gate (open drain) Rev. 9 - 16 August 2022
NXP Semiconductors	74LVC1G38	84Kb / 15P	2-input NAND gate; open drain Rev. 03-27 August 2007
	74AUP2G38	86Kb / 16P	Low-power dual 2-input NAND gate (open-drain) Rev. 01-16 October 2006
	74AUP2G38	501Kb / 17P	Low-power dual 2-input NAND gate; open drain Rev. 04-8 October 2009
Nexperia B.V. All right...	74AUP2G38	252Kb / 17P	Low-power dual 2-input NAND gate; open drain Rev. 10 - 3 December 2020
	74LVC1G38-Q100	783Kb / 13P	2-input NAND gate; open drain
	74LVC1G38	261Kb / 17P	2-input NAND gate; open drain Rev. 10 - 12 January 2022
STMicroelectronics	74VHC03	54Kb / 7P	QUAD 2-INPUT OPEN DRAIN NAND GATE June 1999
Toshiba Semiconductor	TC74HC03AP	208Kb / 7P	Quad 2-Input NAND Gate (open drain)
Toshiba Semiconductor	TC7SZ38F	188Kb / 7P	2-Input NAND Gate(Open Drain Output)