74AUP1G80GF datasheet(10/18 Pages) NXP

部品番号	74AUP1G80GF

部品情報	Low-power D-type flip-flop; positive-edge trigger

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10 / 18 page

74AUP1G80_1

Product data sheet

Rev. 01 — 20 October 2006

10 of 18

NXP Semiconductors

74AUP1G80

Low-power D-type ﬂip-ﬂop; positive-edge trigger

[1]

All typical values are measured at nominal VCC.

[2]

tpd is the same as tPLH and tPHL.

[3]

CPD is used to determine the dynamic power dissipation (PD in µW).

PD =CPD × VCC2 × fi × N+ Σ(CL × VCC2 × fo) where:

fi = input frequency in MHz;

fo = output frequency in MHz;

CL = output load capacitance in pF;

VCC = supply voltage in V;

N = number of inputs switching;

Σ(CL × VCC2 × fo) = sum of the outputs.

tsu(L)

set-up time

LOW

D to CP; see Figure 8

VCC = 0.8 V

-

1.7

-

ns

VCC = 1.1 V to 1.3 V

-

0.3

-

2.0

-

2.0

-

ns

VCC = 1.4 V to 1.6 V

-

0.2

-

1.3

-

1.3

-

ns

VCC = 1.65 V to 1.95 V

-

0.2

-

1.1

-

1.1

-

ns

VCC = 2.3 V to 2.7 V

-

0.3

-

0.8

-

0.8

-

ns

VCC = 3.0 V to 3.6 V

-

0.3

-

0.7

-

0.7

-

ns

th

hold time

D to CP; see Figure 8

VCC = 0.8 V

-

-2.1

-

ns

VCC = 1.1 V to 1.3 V

-

-0.4

-

0.2

-

0.2

-

ns

VCC = 1.4 V to 1.6 V

-

-0.3

-

0.1

-

0.1

-

ns

VCC = 1.65 V to 1.95 V

-

-0.2

-

0

-

0

-

ns

VCC = 2.3 V to 2.7 V

-

-0.2

-

0

-

0

-

ns

VCC = 3.0 V to 3.6 V

-

-0.3

-

0

-

0

-

ns

tW

pulse width

CP HIGH or LOW;

see Figure 8

VCC = 0.8 V

-

5.2

-

ns

VCC = 1.1 V to 1.3 V

-

1.0

-

3.0

-

3.0

-

ns

VCC = 1.4 V to 1.6 V

-

0.8

-

2.0

-

2.0

-

ns

VCC = 1.65 V to 1.95 V

-

0.6

-

2.0

-

2.0

-

ns

VCC = 2.3 V to 2.7 V

-

0.5

-

2.0

-

2.0

-

ns

VCC = 3.0 V to 3.6 V

-

0.5

-

2.0

-

2.0

-

ns

CPD

power

dissipation

capacitance

fi = 1 MHz;

VI = GND to VCC

[3]

VCC = 0.8 V

-

1.8

-

pF

VCC = 1.1 V to 1.3 V

-

1.8

-

pF

VCC = 1.4 V to 1.6 V

-

1.9

-

pF

VCC = 1.65 V to 1.95 V

-

2.0

-

pF

VCC = 2.3 V to 2.7 V

-

2.4

-

pF

VCC = 3.0 V to 3.6 V

-

2.9

-

pF

Table 8.

Dynamic characteristics …continued

Voltages are referenced to GND (ground=0V; for test circuit see Figure 9

Symbol Parameter

Conditions

25

°C

−40 °C to +125 °C

Unit

Min

Typ[1]

Max

Min

(85

°C)

Max

(85

°C)

Min

(125

°C)

Max

(125

°C)

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