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74HCT3G14 データシート(PDF) 8 Page - NXP Semiconductors |
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74HCT3G14 データシート(HTML) 8 Page - NXP Semiconductors |
8 / 18 page 74HC_HCT3G14_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 8 May 2009 8 of 18 NXP Semiconductors 74HC3G14; 74HCT3G14 Triple inverting Schmitt trigger 12. Dynamic characteristics [1] tpd is the same as tPLH and tPHL [2] tt is the same as tTLH and tTHL [3] CPD is used to determine the dynamic power dissipation (PD in µW). PD =CPD × VCC2 × fi × N+ Σ(CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in V; N = number of inputs switching; Σ(C L × VCC 2 × f o) = sum of the outputs. Table 9. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 11. Symbol Parameter Conditions 25 °C −40 °C to +125 °C Unit Min Typ Max Min Max (85 °C) Max (125 °C) 74HC3G14 tpd propagation delay nA to nY; see Figure 10 [1] VCC = 2.0 V - 53 125 - 155 190 ns VCC = 4.5 V - 16 25 - 31 38 ns VCC = 6.0 V - 13 21 - 26 32 ns tt transition time nY; see Figure 10 [2] VCC = 2.0 V - 20 75 - 95 110 ns VCC = 4.5 V - 7 15 - 19 22 ns VCC = 6.0 V - 5 13 - 16 19 ns CPD power dissipation capacitance VI = GND to VCC [3] -10- - - - pF 74HCT3G14 tpd propagation delay nA to nY; see Figure 10 [1] VCC = 4.5 V - 21 32 - 40 48 ns tt transition time nY; see Figure 10 [2] VCC = 4.5 V - 6 15 - 19 22 ns CPD power dissipation capacitance VI = GND to VCC − 1.5 V [3] -10- - - - pF |
同様の部品番号 - 74HCT3G14 |
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同様の説明 - 74HCT3G14 |
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