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74HC299PW データシート(PDF) 9 Page - NXP Semiconductors |
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74HC299PW データシート(HTML) 9 Page - NXP Semiconductors |
9 / 24 page 74HC_HCT299_3 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 — 28 July 2008 9 of 24 NXP Semiconductors 74HC299; 74HCT299 8-bit universal shift register; 3-state [1] CPD is used to determine the dynamic power dissipation (PD in µW). PD =CPD × VCC2 × fi + ∑(CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; VIL LOW-level input voltage VCC = 4.5 V to 5.5 V - 1.2 0.8 - 0.8 - 0.8 V VOH HIGH-level output voltage VI = VIH or VIL; VCC = 4.5 V all outputs IO = −20 µA 4.4 4.5 - 4.4 - 4.4 - V standard outputs IO = −4.0 mA 3.98 4.32 - 3.84 - 3.7 - V bus driver outputs IO = −6.0 mA 3.98 4.32 - 3.84 - 3.7 - V VOL LOW-level output voltage VI = VIH or VIL; VCC = 4.5 V all outputs IO = 20 µA - 0 0.1 - 0.1 - 0.1 V standard outputs IO = 4.0 mA - 0.15 0.26 - 0.33 - 0.4 V bus driver outputs IO = 6.0 mA - 0.16 0.26 - 0.33 - 0.4 V II input leakage current VI = VCC or GND; VCC = 5.5 V -- ±0.1 - ±1.0 - ±1.0 µA IOZ OFF-state output current VI =VIH or VIL;VO =VCC or GND per input pin; other inputs at VCC or GND; IO = 0 A; VCC = 5.5 V -- ±0.5 - ±5.0 - ±10.0 µA ICC supply current VI =VCC or GND; IO =0A; VCC = 5.5 V - - 8.0 - 80 - 160 µA ∆ICC additional supply current per input pin; VI =VCC − 2.1 V; other inputs at VCC or GND; IO =0A; VCC = 4.5 V to 5.5 V I/On, DSR, DSL, MR and S1 - 25 90 - 112.5 - 122.5 µA CP, S0 - 60 216 - 270 - 294 µA OEn - 30 108 - 135 - 147 µA CI input capacitance - 3.5 - - - - - pF CI/O input/output capacitance - 10 - ---- pF CPD power dissipation capacitance per package [1] - 125 ----- pF Table 6. Static characteristics …continued At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions 25 °C −40 °C to +85 °C −40 °C to +125 °C Unit Min Typ Max Min Max Min Max |
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同様の説明 - 74HC299PW |
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