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BAT54L データシート(PDF) 3 Page - NXP Semiconductors |
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BAT54L データシート(HTML) 3 Page - NXP Semiconductors |
3 / 7 page 2003 Jun 23 3 NXP Semiconductors Product data sheet Schottky barrier diode BAT54L ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. Note 1. Pulse test: tp = 300 μs; δ = 0.02. THERMAL CHARACTERISTICS Note 1. Refer to SOD882 standard mounting conditions (footprint), FR4 printed-circuit board with 60 μm copper strip line. Soldering Reflow soldering is the only recommended soldering method. SYMBOL PARAMETER CONDITIONS MAX. UNIT VF forward voltage see Fig.2 IF = 0.1 mA 240 mV IF = 1 mA 320 mV IF = 10 mA 400 mV IF = 30 mA 500 mV IF = 100 mA 800 mV IR continuous reverse current VR = 25 V; see Fig.3; note 1 2 μA Cd diode capacitance VR = 1 V; f = 1 MHz; see Fig.4 10 pF SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 500 K/W |
同様の部品番号 - BAT54L |
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同様の説明 - BAT54L |
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