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BC856AW データシート(PDF) 3 Page - NXP Semiconductors

部品番号 BC856AW
部品情報  PNP general purpose transistors
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メーカー  NXP [NXP Semiconductors]
ホームページ  http://www.nxp.com
Logo NXP - NXP Semiconductors

BC856AW データシート(HTML) 3 Page - NXP Semiconductors

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2002 Feb 04
3
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC856W; BC857W; BC858W
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
Note
1.
Refer to SOT323 standard mounting conditions.
THERMAL CHARACTERISTICS
Note
1.
Refer to SOT323 standard mounting conditions.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
BC856W
−80
V
BC857W
−50
V
BC858W
−30
V
VCEO
collector-emitter voltage
open base
BC856W
−65
V
BC857W
−45
V
BC858W
−30
V
VEBO
emitter-base voltage
open collector
−5
V
IC
collector current (DC)
−100
mA
ICM
peak collector current
−200
mA
IBM
peak base current
−200
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
200
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
−65
+150
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to
ambient
in free air; note 1
625
K/W


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