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BC856AW データシート(PDF) 6 Page - NXP Semiconductors |
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BC856AW データシート(HTML) 6 Page - NXP Semiconductors |
6 / 10 page 2002 Feb 04 6 NXP Semiconductors Product data sheet PNP general purpose transistors BC856W; BC857W; BC858W handbook, halfpage 0 400 600 800 1000 hFE 200 MGT715 −10−2 −10−1 −1 −10 −102 −103 IC (mA) (1) (2) (3) Fig.6 DC current gain as a function of collector current; typical values. BC857BW; VCE = −5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. handbook, halfpage 0 −1200 −1000 −800 −600 −400 −200 MGT716 −10−2 −10−1 −1 −10 −102 −103 IC (mA) VBE (mV) (1) (2) (3) Fig.7 Base-emitter voltage as a function of collector current; typical values. BC857BW; VCE = −5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. handbook, halfpage −104 −103 −102 −10 MGT717 −10−1 −1 −10 −102 −103 IC (mA) VCEsat (mV) (1) (2) (3) Fig.8 Collector-emitter saturation voltage as a function of collector current; typical values. BC857BW; IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. handbook, halfpage MGT718 −10−1 −1 −10 −102 −103 IC (mA) 0 −1200 −1000 −800 −600 −400 −200 VBEsat (mV) (1) (2) (3) Fig.9 Base-emitter saturation voltage as a function of collector current; typical values. BC857BW; IC/IB = 20. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. |
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