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BC856AW データシート(PDF) 6 Page - NXP Semiconductors

部品番号 BC856AW
部品情報  PNP general purpose transistors
Download  10 Pages
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メーカー  NXP [NXP Semiconductors]
ホームページ  http://www.nxp.com
Logo NXP - NXP Semiconductors

BC856AW データシート(HTML) 6 Page - NXP Semiconductors

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2002 Feb 04
6
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC856W; BC857W; BC858W
handbook, halfpage
0
400
600
800
1000
hFE
200
MGT715
−10−2
−10−1
−1
−10
−102
−103
IC (mA)
(1)
(2)
(3)
Fig.6
DC current gain as a function of collector
current; typical values.
BC857BW; VCE = −5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
handbook, halfpage
0
−1200
−1000
−800
−600
−400
−200
MGT716
−10−2
−10−1
−1
−10
−102
−103
IC (mA)
VBE
(mV)
(1)
(2)
(3)
Fig.7
Base-emitter voltage as a function of
collector current; typical values.
BC857BW; VCE = −5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
handbook, halfpage
−104
−103
−102
−10
MGT717
−10−1
−1
−10
−102
−103
IC (mA)
VCEsat
(mV)
(1)
(2)
(3)
Fig.8
Collector-emitter saturation voltage as a
function of collector current; typical values.
BC857BW; IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
handbook, halfpage
MGT718
−10−1
−1
−10
−102
−103
IC (mA)
0
−1200
−1000
−800
−600
−400
−200
VBEsat
(mV)
(1)
(2)
(3)
Fig.9
Base-emitter saturation voltage as a
function of collector current; typical values.
BC857BW; IC/IB = 20.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.


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