BCW61B datasheet(3/6 Pages) NXP

部品番号	BCW61B

部品情報	PNP general purpose transistors

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メーカー	NXP [NXP Semiconductors]

ホームページ	http://www.nxp.com

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3 / 6 page

1999 Apr 12

3

NXP Semiconductors

Product data sheet

PNP general purpose transistors

BCW61 series

THERMAL CHARACTERISTICS

Note

1.

Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

Note

1.

Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

500

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB = −32 V

−

−20

nA

IE = 0; VCB = −32 V; Tamb = 150 °C

−

−20

μA

IEBO

emitter cut-off current

IC = 0; VEB = −4 V

−

−20

nA

hFE

DC current gain

IC = −10 μA; VCE = −5 V

BCW61B

30

−

BCW61C

40

−

BCW61D

100

−

DC current gain

IC = −2 mA; VCE = −5 V

BCW61B

180

−

310

BCW61C

250

−

460

BCW61D

380

−

630

DC current gain

IC = −50 mA; VCE = −1 V

BCW61B

80

−

BCW61C

100

−

BCW61D

110

−

VCEsat

collector-emitter saturation voltage IC = −10 mA; IB = −0.25 mA

−60

−

−250

mV

IC = −50 mA; IB = −1.25 mA

−120

−

−550

mV

VBEsat

base-emitter saturation voltage

IC = −10 mA; IB = −0.25 mA

−600

−

−850

mV

IC = −50 mA; IB = −1.25 mA

−0.68 −

−1.05 V

VBE

base-emitter voltage

IC = −2 mA; VCE = −5 V

−600

−650

−750

mV

IC = −10 μA; VCE = −5 V

−

−550

−

mV

IC = −50 mA; VCE = −1 V

−

−720

−

mV

Cc

collector capacitance

IE = ie = 0; VCB = −10 V; f = 1 MHz

−

4.5

−

pF

Ce

emitter capacitance

IC = ic = 0; VEB = −0.5 V; f = 1 MHz

−

11

−

pF

fT

transition frequency

IC = −10 mA; VCE = −5 V;

f = 100 MHz; note 1

100

−

MHz

F

noise figure

IC = −200 μA; VCE = −5 V; RS = 2 kΩ;

f = 1 kHz; B = 200 Hz

−

2

6

dB

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