BF820W datasheet(3/6 Pages) NXP

部品番号	BF820W

部品情報	NPN high-voltage transistor

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3 / 6 page

2003 Sep 09

3

NXP Semiconductors

Product data sheet

NPN high-voltage transistor

BF820W

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1.

Transistor mounted on an FR4 printed-circuit board.

THERMAL CHARACTERISTICS

Note

1.

Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

Note

1.

Pulse test: tp ≤ 300 µs; δ ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−

300

V

VCEO

collector-emitter voltage

open base

−

300

V

VEBO

emitter-base voltage

open collector

−

5

V

IC

collector current (DC)

−

50

mA

ICM

peak collector current

−

100

mA

IBM

peak base current

−

50

mA

Ptot

total power dissipation

Tamb ≤ 25 °C; note 1

−

200

mW

Tstg

storage temperature

−65

+150

°C

Tj

junction temperature

−

150

°C

Tamb

operating ambient temperature

−65

+150

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

625

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB = 200 V

−

10

nA

IE = 0; VCB = 200 V; Tj = 150 °C

−

10

µA

IEBO

emitter cut-off current

IC = 0; VEB = 5 V

−

50

nA

hFE

DC current gain

IC = 25 mA; VCE = 20 V

50

−

VCEsat

collector-emitter saturation voltage

IC = 30 mA; IB = 5 mA; note 1

−

600

mV

Cre

feedback capacitance

IC = ic = 0; VCB = 30 V; f = 1 MHz

−

1.6

pF

fT

transition frequency

IC = 10 mA; VCE = 10 V; f = 100 MHz

60

−

MHz

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