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Si2335DS データシート(PDF) 5 Page - Texas Instruments |
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Si2335DS データシート(HTML) 5 Page - Texas Instruments |
5 / 9 page www.ti.com Features Proper sequencing is ensured in the design with the use of a NPN transistor and a P-channel MOSFET. As required, Core 1.2 V at 600 mA comes first, and is followed by Static 1.2 V + VRTC at 251 mA. Then comes Static 1.8 V at 230 mA, which in turn pulls down the gate of a P-channel MOSFET with the use of a NPN transistor. Last, Static 3.3 V at 115 mA comes up. (1) Use three such LDOs to power up DVDDA, DVDDB, and DVDDC. (It can be either 1.8 V or 3.3 V.) (2) Rx = 0.499 M Ω, Ry = 1 MΩ for Vout = 1.8 V (3) Rx = 1.8 M Ω, Ry = 1 MΩ for Vout = 3.3 V (4) For proper sequencing of output, the enable of the LDOs are fed either from a 1.2-V output from TPS62232 if DVDDX is 1.8 V or from a 1.8-V output from TPS62231 if DVDDX is 3.3 V. Figure 2. Optional Circuit for DVDD_A, DVDD_B, and DVDD_C 5 SLVA339A – June 2009 – Revised May 2010 High-Vin, High-Efficiency Power Solution Using DC/DC Converters With DVFS Copyright © 2009–2010, Texas Instruments Incorporated |
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同様の説明 - Si2335DS |
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