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Si2335DS データシート(PDF) 5 Page - Texas Instruments

部品番号 Si2335DS
部品情報  High-Vin, High-Efficiency Power Solution Using DC/DC Converter With DVFS
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メーカー  TI [Texas Instruments]
ホームページ  http://www.ti.com
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Si2335DS データシート(HTML) 5 Page - Texas Instruments

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Features
Proper sequencing is ensured in the design with the use of a NPN transistor and a P-channel MOSFET.
As required, Core 1.2 V at 600 mA comes first, and is followed by Static 1.2 V + VRTC at 251 mA. Then
comes Static 1.8 V at 230 mA, which in turn pulls down the gate of a P-channel MOSFET with the use of
a NPN transistor. Last, Static 3.3 V at 115 mA comes up.
(1)
Use three such LDOs to power up DVDDA, DVDDB, and DVDDC. (It can be either 1.8 V or 3.3 V.)
(2)
Rx = 0.499 M
Ω, Ry = 1 MΩ for Vout = 1.8 V
(3)
Rx = 1.8 M
Ω, Ry = 1 MΩ for Vout = 3.3 V
(4)
For proper sequencing of output, the enable of the LDOs are fed either from a 1.2-V output from TPS62232 if
DVDDX is 1.8 V or from a 1.8-V output from TPS62231 if DVDDX is 3.3 V.
Figure 2. Optional Circuit for DVDD_A, DVDD_B, and DVDD_C
5
SLVA339A – June 2009 – Revised May 2010
High-Vin, High-Efficiency Power Solution Using DC/DC Converters With DVFS
Copyright © 2009–2010, Texas Instruments Incorporated


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