CSD16407Q5C datasheet(5/10 Pages) TI

部品番号	CSD16407Q5C

部品情報	DualCool??N-Channel NexFET??Power MOSFET

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メーカー	TI [Texas Instruments]

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TC − Case Temperature − °C

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

−75

−25

25

75

125

175

G007

ID = 25A

VGS = 10V

0.0

0.2

0.4

0.6

0.8

1.0

1.2

VSD − Source to Drain Voltage − V

G008

TC = 125°C

TC = 25°C

100

1

0.01

0.0001

0.001

0.1

10

VD − DrainVoltage − V

G009

1k

10

0.01

1

100

0.1

0.01

0.1

10

100

1

1ms

10ms

100ms

DC

100 S

m

AreaLimited

byRDS(on)

SinglePulse

TypicalR

=94 C/W(minCu)

qJA

o

t(AV) − Timein Avalanche − ms

G010

1k

10

1

100

0.01

0.1

10

100

1

TC =25°C

TC =125°C

TC − Case Temperature − °C

0

20

40

60

80

100

120

−50

−25

0

25

50

75

100

125

150

175

G011

CSD16407Q5C

www.ti.com

SLPS227C – DECEMBER 2009 – REVISED FEBRUARY 2010

TYPICAL MOSFET CHARACTERISTICS (continued)

TA = 25°C, unless otherwise specified

Figure 8. Normalized On-State Resistance vs. Temperature

Figure 9. Typical Diode Forward Voltage

TEXT ADDED FOR SPACING

Figure 10. Maximum Safe Operating Area

Figure 11. Single Pulse Unclamped Inductive Switching

TEXT ADDED FOR SPACING

Figure 12. Maximum Drain Current vs. Temperature

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同様の部品番号 - CSD16407Q5C

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Texas Instruments	CSD16407Q5C	345Kb / 11P	[Old version datasheet] ID The NexFET??power MOSFET has been designed to minimize losses in power conversion applications.

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