データシートサーチシステム
  Japanese  ▼
ALLDATASHEET.JP

X  

CSD16407Q5C データシート(PDF) 2 Page - Texas Instruments

部品番号 CSD16407Q5C
部品情報  DualCool??N-Channel NexFET??Power MOSFET
Download  10 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
メーカー  TI [Texas Instruments]
ホームページ  http://www.ti.com
Logo TI - Texas Instruments

CSD16407Q5C データシート(HTML) 2 Page - Texas Instruments

  CSD16407Q5C Datasheet HTML 1Page - Texas Instruments CSD16407Q5C Datasheet HTML 2Page - Texas Instruments CSD16407Q5C Datasheet HTML 3Page - Texas Instruments CSD16407Q5C Datasheet HTML 4Page - Texas Instruments CSD16407Q5C Datasheet HTML 5Page - Texas Instruments CSD16407Q5C Datasheet HTML 6Page - Texas Instruments CSD16407Q5C Datasheet HTML 7Page - Texas Instruments CSD16407Q5C Datasheet HTML 8Page - Texas Instruments CSD16407Q5C Datasheet HTML 9Page - Texas Instruments Next Button
Zoom Inzoom in Zoom Outzoom out
 2 / 10 page
background image
CSD16407Q5C
SLPS227C – DECEMBER 2009 – REVISED FEBRUARY 2010
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ELECTRICAL CHARACTERISTICS
TA = 25°C, unless otherwise specified
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Static Characteristics
BVDSS
Drain to Source Voltage
VGS = 0V, ID = 250mA
25
V
IDSS
Drain to Source Leakage Current
VGS = 0V, VDS = 20V
1
mA
IGSS
Gate to Source Leakage Current
VDS = 0V, VGS = +16V / –12V
100
nA
VGS(th)
Gate to Source Threshold Voltage
VDS = VGS, ID = 250mA
1.3
1.6
1.9
V
VGS = 4.5V, ID = 25A
2.5
3.3
m
RDS(on)
Drain to Source On Resistance
VGS = 10V, ID = 25A
1.8
2.4
m
gfs
Transconductance
VDS = 15V, ID = 25A
111
S
Dynamic Characteristics
CISS
Input Capacitance
2040
2660
pF
COSS
Output Capacitance
VGS = 0V, VDS = 12.5V , f = 1MHz
1600
2080
pF
CRSS
Reverse Transfer Capacitance
115
160
pF
Rg
Series Gate Resistance
1.2
2.4
Qg
Gate Charge Total (4.5V)
13.3
18
nC
Qgd
Gate Charge Gate to Drain
3.5
nC
VDS = 12.5V, ID = 25A
Qgs
Gate Charge Gate to Source
5.3
nC
Qg(th)
Gate Charge at Vth
3.1
nC
QOSS
Output Charge
VDS = 13.5V, VGS = 0V
33
nC
td(on)
Turn On Delay Time
11.9
ns
tr
Rise Time
18.4
ns
VDS = 12.5V, VGS = 4.5V,
ID = 25A, RG = 2Ω
td(off)
Turn Off Delay Time
16
ns
tf
Fall Time
9
ns
Diode Characteristics
VSD
Diode Forward Voltage
IS = 25A, VGS = 0V
0.8
1
V
Qrr
Reverse Recovery Charge
VDD = 13.5V, IF = 25A, di/dt = 300A/ms
42
nC
trr
Reverse Recovery Time
VDD = 13.5V, IF = 25A, di/dt = 300A/ms
34
ns
THERMAL CHARACTERISTICS
TA = 25°C, unless otherwise specified
PARAMETER
MIN
TYP
MAX
UNIT
RqJC
Thermal Resistance Junction to Case (Top Source)(1)
1.2
°C/W
RqJC
Thermal Resistance Junction to Case (Bottom Drain)(1)
1.1
°C/W
RqJA
Thermal Resistance Junction to Ambient(1) (2)
51
°C/W
(1)
RqJC is determined with the device mounted on a 1-inch
2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 1.5-inch × 1.5-inch (3.81-cm ×
3.81-cm), 0.06-inch (1.52-mm) thick FR4 PCB. RqJC is specified by design, whereas RqJA is determined by the user’s board design.
(2)
Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu.
2
Submit Documentation Feedback
Copyright © 2009–2010, Texas Instruments Incorporated
Product Folder Link(s): CSD16407Q5C


同様の部品番号 - CSD16407Q5C

メーカー部品番号データシート部品情報
logo
Texas Instruments
CSD16407Q5C TI1-CSD16407Q5C_10 Datasheet
345Kb / 11P
[Old version datasheet]   ID The NexFET??power MOSFET has been designed to minimize losses in power conversion applications.
More results

同様の説明 - CSD16407Q5C

メーカー部品番号データシート部品情報
logo
Texas Instruments
CSD16408Q5C TI-CSD16408Q5C Datasheet
177Kb / 10P
[Old version datasheet]   DualCool??N-Ch NexFET??Power MOSFET
CSD16322Q5C TI-CSD16322Q5C Datasheet
284Kb / 10P
[Old version datasheet]   DualCool??N-Channel NexFET??Power MOSFETs
CSD16325Q5C TI-CSD16325Q5C Datasheet
212Kb / 10P
[Old version datasheet]   DualCool??N-Channel NexFET??Power MOSFETs
CSD16321Q5C TI-CSD16321Q5C Datasheet
220Kb / 10P
[Old version datasheet]   DualCool??N-Channel NexFET??Power MOSFETs
CSD13201W10 TI1-CSD13201W10 Datasheet
1Mb / 13P
[Old version datasheet]   N-Channel NexFET Power MOSFET
CSD16413Q5A TI1-CSD16413Q5A Datasheet
342Kb / 11P
[Old version datasheet]   N-Channel NexFET??Power MOSFET
CSD18563Q5A TI1-CSD18563Q5A_16 Datasheet
825Kb / 13P
[Old version datasheet]   N-Channel NexFET Power MOSFET
CSD17313Q2Q1 TI1-CSD17313Q2Q1_15 Datasheet
411Kb / 13P
[Old version datasheet]   N-Channel NexFET Power MOSFET
CSD16408Q5 TI-CSD16408Q5 Datasheet
204Kb / 10P
[Old version datasheet]   N-Channel NexFET Power MOSFET
CSD16327Q3 TI1-CSD16327Q3 Datasheet
991Kb / 11P
[Old version datasheet]   N-Channel NexFET??Power MOSFET
More results


Html Pages

1 2 3 4 5 6 7 8 9 10


データシート ダウンロード

Go To PDF Page


リンク URL




プライバシーポリシー
ALLDATASHEET.JP
ALLDATASHEETはお客様のビジネスに役立ちますか?  [ DONATE ] 

Alldatasheetは   |   広告   |   お問い合わせ   |   プライバシーポリシー   |   リンク交換   |   メーカーリスト
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com