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CSD16407Q5C データシート(PDF) 2 Page - Texas Instruments |
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CSD16407Q5C データシート(HTML) 2 Page - Texas Instruments |
2 / 10 page CSD16407Q5C SLPS227C – DECEMBER 2009 – REVISED FEBRUARY 2010 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ELECTRICAL CHARACTERISTICS TA = 25°C, unless otherwise specified PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Static Characteristics BVDSS Drain to Source Voltage VGS = 0V, ID = 250mA 25 V IDSS Drain to Source Leakage Current VGS = 0V, VDS = 20V 1 mA IGSS Gate to Source Leakage Current VDS = 0V, VGS = +16V / –12V 100 nA VGS(th) Gate to Source Threshold Voltage VDS = VGS, ID = 250mA 1.3 1.6 1.9 V VGS = 4.5V, ID = 25A 2.5 3.3 m Ω RDS(on) Drain to Source On Resistance VGS = 10V, ID = 25A 1.8 2.4 m Ω gfs Transconductance VDS = 15V, ID = 25A 111 S Dynamic Characteristics CISS Input Capacitance 2040 2660 pF COSS Output Capacitance VGS = 0V, VDS = 12.5V , f = 1MHz 1600 2080 pF CRSS Reverse Transfer Capacitance 115 160 pF Rg Series Gate Resistance 1.2 2.4 Ω Qg Gate Charge Total (4.5V) 13.3 18 nC Qgd Gate Charge Gate to Drain 3.5 nC VDS = 12.5V, ID = 25A Qgs Gate Charge Gate to Source 5.3 nC Qg(th) Gate Charge at Vth 3.1 nC QOSS Output Charge VDS = 13.5V, VGS = 0V 33 nC td(on) Turn On Delay Time 11.9 ns tr Rise Time 18.4 ns VDS = 12.5V, VGS = 4.5V, ID = 25A, RG = 2Ω td(off) Turn Off Delay Time 16 ns tf Fall Time 9 ns Diode Characteristics VSD Diode Forward Voltage IS = 25A, VGS = 0V 0.8 1 V Qrr Reverse Recovery Charge VDD = 13.5V, IF = 25A, di/dt = 300A/ms 42 nC trr Reverse Recovery Time VDD = 13.5V, IF = 25A, di/dt = 300A/ms 34 ns THERMAL CHARACTERISTICS TA = 25°C, unless otherwise specified PARAMETER MIN TYP MAX UNIT RqJC Thermal Resistance Junction to Case (Top Source)(1) 1.2 °C/W RqJC Thermal Resistance Junction to Case (Bottom Drain)(1) 1.1 °C/W RqJA Thermal Resistance Junction to Ambient(1) (2) 51 °C/W (1) RqJC is determined with the device mounted on a 1-inch 2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 1.5-inch × 1.5-inch (3.81-cm × 3.81-cm), 0.06-inch (1.52-mm) thick FR4 PCB. RqJC is specified by design, whereas RqJA is determined by the user’s board design. (2) Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu. 2 Submit Documentation Feedback Copyright © 2009–2010, Texas Instruments Incorporated Product Folder Link(s): CSD16407Q5C |
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同様の説明 - CSD16407Q5C |
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