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TPC6011 データシート(PDF) 3 Page - Toshiba Semiconductor |
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TPC6011 データシート(HTML) 3 Page - Toshiba Semiconductor |
3 / 7 page TPC6011 2010-02-15 3 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ± 20 V, VDS = 0 V ⎯ ⎯ ±100 nA Drain cut-off current IDSS VDS = 30 V, VGS = 0 V ⎯ ⎯ 10 μA V (BR) DSS ID = 10 mA, VGS = 0 V 30 ⎯ ⎯ Drain-source breakdown voltage V (BR) DSX ID = 10 mA, VGS = −20 V 10 ⎯ ⎯ V Gate threshold voltage Vth VDS = 10 V, ID = 1mA 1.3 ⎯ 2.5 V RDS (ON) VGS = 4.5 V, ID = 3 A ⎯ 24 32 Drain-source ON-resistance RDS (ON) VGS =10 V, ID = 3 A ⎯ 16 20 m Ω Forward transfer admittance |Yfs| VDS = 10 V, ID = 3 A 5 10 ⎯ S Input capacitance Ciss ⎯ 640 ⎯ Reverse transfer capacitance Crss ⎯ 125 ⎯ Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 185 ⎯ pF Rise time tr ⎯ 5.8 ⎯ Turn-on time ton ⎯ 12 ⎯ Fall time tf ⎯ 8 ⎯ Switching time Turn-off time toff Duty ≤ 1%, t w = 10 μs ⎯ 24.5 ⎯ ns Total gate charge (gate-source plus gate-drain) Qg ⎯ 14 ⎯ Gate-source charge 1 Qgs 1 ⎯ 2.7 ⎯ Gate-drain (“miller”) charge Qgd VDD ≈ 24 V, VGS = 10 V, ID = 6 A ⎯ 4.2 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note 1) IDRP ⎯ ⎯ ⎯ 24 A Forward voltage (diode) VDSF IDR = 6 A, VGS = 0 V ⎯ ⎯ − 1.2 V VDD ≈ 15 V 0 V VGS 10 ID = 3 A VOUT |
同様の部品番号 - TPC6011 |
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同様の説明 - TPC6011 |
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