TPC6011 datasheet(3/7 Pages) TOSHIBA

部品番号	TPC6011

部品情報	Notebook PC Applications Portable Equipment Applications

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メーカー	TOSHIBA [Toshiba Semiconductor]

ホームページ	http://www.semicon.toshiba.co.jp/eng

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3 / 7 page

TPC6011

2010-02-15

3

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ± 20 V, VDS = 0 V

⎯

±100

nA

Drain cut-off current

IDSS

VDS = 30 V, VGS = 0 V

⎯

10

μA

V (BR) DSS

ID = 10 mA, VGS = 0 V

30

⎯

Drain-source breakdown voltage

V (BR) DSX

ID = 10 mA, VGS = −20 V

10

⎯

V

Gate threshold voltage

Vth

VDS = 10 V, ID = 1mA

1.3

⎯

2.5

V

RDS (ON)

VGS = 4.5 V, ID = 3 A

⎯

24

32

Drain-source ON-resistance

RDS (ON)

VGS =10 V, ID = 3 A

⎯

16

20

m

Ω

Forward transfer admittance

|Yfs|

VDS = 10 V, ID = 3 A

5

10

⎯

S

Input capacitance

Ciss

⎯

640

⎯

Reverse transfer capacitance

Crss

⎯

125

⎯

Output capacitance

Coss

VDS = 10 V, VGS = 0 V, f = 1 MHz

⎯

185

⎯

pF

Rise time

tr

⎯

5.8

⎯

Turn-on time

ton

⎯

12

⎯

Fall time

tf

⎯

8

⎯

Switching time

Turn-off time

toff

Duty

≤ 1%, t

w = 10 μs

⎯

24.5

⎯

ns

Total gate charge

(gate-source plus gate-drain)

Qg

⎯

14

⎯

Gate-source charge 1

Qgs 1

⎯

2.7

⎯

Gate-drain (“miller”) charge

Qgd

VDD ≈ 24 V, VGS = 10 V, ID = 6 A

⎯

4.2

⎯

nC

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Drain reverse

current

Pulse (Note 1)

IDRP

⎯

24

A

Forward voltage (diode)

VDSF

IDR = 6 A, VGS = 0 V

⎯

− 1.2

V

VDD ≈ 15 V

0 V

VGS

10

ID = 3 A

VOUT

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