TPC8126 datasheet(3/7 Pages) TOSHIBA

部品番号	TPC8126

部品情報	Lithium Ion Battery Applications Power Management Switch Applications

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メーカー	TOSHIBA [Toshiba Semiconductor]

ホームページ	http://www.semicon.toshiba.co.jp/eng

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3 / 7 page

TPC8126

2009-11-19

3

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±20 V, VDS = 0 V

⎯

±100

nA

Drain cut-OFF current

IDSS

VDS = −30 V, VGS = 0 V

⎯

−10

μA

V (BR) DSS

ID = −10 mA, VGS = 0 V

−30

⎯

Drain-source breakdown voltage

V (BR) DSX

ID = −10 mA, VGS = 10 V (Note 6)

−21

⎯

V

Gate threshold voltage

Vth

VDS = −10 V, ID = −0.5 mA

−0.8

⎯

−2.0

V

VGS = −4.5 V, ID = −5.5 A

⎯

10.5

14

Drain-source ON-resistance

RDS (ON)

VGS = −10 V, ID = −5.5 A

⎯

7.5

10

m

Ω

Input capacitance

Ciss

⎯

2400

⎯

Reverse transfer capacitance

Crss

⎯

400

⎯

Output capacitance

Coss

VDS = −10 V, VGS = 0 V, f = 1 MHz

⎯

460

⎯

pF

Rise time

tr

⎯

8

⎯

Turn-ON time

ton

⎯

16

⎯

Fall time

tf

⎯

65

⎯

Switching time

Turn-OFF time

toff

Duty

≤ 1%, tw = 10 μs

⎯

200

⎯

ns

Total gate charge

(gate-source plus gate-drain)

Qg

⎯

56

⎯

Gate-source charge 1

Qgs1

⎯

5.6

⎯

Gate-drain (“miller”) charge

Qgd

VDD ≈ −24 V, VGS = −10 V,

ID = −11 A

⎯

15

⎯

nC

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Drain reverse

current

Pulse

(Note 1)

IDRP

⎯

−44

A

Forward voltage (diode)

VDSF

IDR = −11 A, VGS = 0 V

⎯

1.2

V

Note 6: VDSX mode (the application of a plus voltage between gate and source) may cause decrease in maximum

rating of drain-source voltage.

VDD ≈ −15 V

0 V

VGS

−10 V

ID = −5.5A

VOUT

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