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Si8233BB-C-IS データシート(PDF) 7 Page - Silicon Laboratories

部品番号 Si8233BB-C-IS
部品情報  0.5 AND 4.0 AMP ISODRIVERS (2.5 AND 5 KVRMS)
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メーカー  SILABS [Silicon Laboratories]
ホームページ  http://www.silabs.com
Logo SILABS - Silicon Laboratories

Si8233BB-C-IS データシート(HTML) 7 Page - Silicon Laboratories

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Si823x
Rev. 0.3
7
VDDI Undervoltage Threshold
VDDIUV+
VDDI rising
3.60
4.0
4.45
V
VDDI Undervoltage Threshold
VDDIUV–
VDDI falling
3.30
3.70
4.15
V
VDDI Lockout Hysteresis
VDDIHYS
—250
mV
VDDA, VDDB Undervoltage
Threshold
VDDAUV+,
VDDBUV+
VDDA, VDDB rising
5 V threshold
See Figure 36 on page 25.
5.20
5.80
6.30
V
8 V threshold
See Figure 37 on page 25.
7.50
8.60
9.40
V
10 V threshold
See Figure 38 on page 25.
9.60
11.1
12.2
V
12.5 V threshold
See Figure 39 on page 25.
12.4
13.8
14.8
V
VDDA, VDDB Undervoltage
Threshold
VDDAUV–,
VDDBUV–
VDDA, VDDB falling
5 V threshold
See Figure 36 on page 25.
4.90
5.52
6.0
V
8 V threshold
See Figure 37 on page 25.
7.20
8.10
8.70
V
10 V threshold
See Figure 38 on page 25.
9.40
10.1
10.9
V
12.5 V threshold
See Figure 39 on page 25.
11.6
12.8
13.8
V
VDDA, VDDB
Lockout hysteresis
VDDAHYS,
VDDBHYS
UVLO voltage = 5 V
280
mV
VDDA, VDDB
Lockout hysteresis
VDDAHYS,
VDDBHYS
UVLO voltage = 8 V
600
mV
VDDA, VDDB
Lockout hysteresis
VDDAHYS,
VDDBHYS
UVLO voltage = 10 V or 12.5 V
1000
mV
AC Specifications
Minimum Pulse Width
10
ns
Propagation Delay
tPHL, tPLH
CL = 200 pF
30
60
ns
Pulse Width Distortion
|tPLH - tPHL|
PWD
5.60
ns
Minimum Overlap Time2
TDD
DT = VDDI, No-Connect
0.4
ns
Programmed Dead Time3
DT
Figure 41, RDT = 100 k
900
ns
Figure 41, RDT = 6 k
70
ns
Output Rise and Fall Time
tR,tF
CL = 200 pF (Si8230/1/2)
12
ns
CL = 200 pF (Si8233/4/5/6)
20
ns
Table 1. Electrical Characteristics1 (Continued)
4.5 V < VDDI < 5.5 V, VDDA = VDDB = 12 V or 15 V. TA = –40 to +125 °C. Typical specs at 25 °C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Notes:
1. VDDA = VDDB = 12 V for 5, 8, and 10 V UVLO devices; VDDA = VDDB = 15 V for 12.5 V UVLO devices.
2. TDD is the minimum overlap time without triggering overlap protection (Si8230/1/3/4 only).
3. The largest RDT resistor that can be used is 220 k
.


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