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2SJ681 データシート(Datasheet) 1 Page - Toshiba Semiconductor

部品番号. 2SJ681
部品情報  TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSIII)
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メーカー  TOSHIBA [Toshiba Semiconductor]
ホームページ  http://www.semicon.toshiba.co.jp/eng
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2SJ681
2009-09-29
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSIII)
2SJ681
Relay Drive, DC−DC Converter and Motor Drive
Applications
4-V gate drive
Low drain-source ON-resistance: RDS (ON) = 0.12 Ω (typ.)
High forward transfer admittance: |Yfs| = 5.0 S (typ.)
Low leakage current: IDSS = −100 μA (max) (VDS = −60 V)
Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
VDSS
−60
V
Drain−gate voltage (RGS = 20 kΩ)
VDGR
−60
V
Gate−source voltage
VGSS
±20
V
DC
(Note 1)
ID
−5
A
Drain current
Pulse(Note 1)
IDP
−20
A
Drain power dissipation
PD
20
W
Single pulse avalanche energy
(Note 2)
EAS
40.5
mJ
Avalanche current
IAR
−5
A
Repetitive avalenche energy (Note 3)
EAR
2
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch−c)
6.25
°C / W
Thermal resistance, channel to ambient
Rth (ch−a)
125
°C / W
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: VDD = −25 V, Tch = 25°C (initial), L = 2.2 mH, RG = 25 Ω, IAR = −5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
2.3
1.1
± 0.2
0.9
0.6
± 0.15
5.2
± 0.2
2.3
0.6 MAX.
6.5
± 0.2
1
2
3
0.6 MAX.
0.6
± 0.15
0.8 MAX.
1.1 MAX.
1. GATE
2. DRAIN
HEAT SINK)
3. SOURSE
3
2
1
JEDEC
JEITA
TOSHIBA
2-7J2B
Weight: 0.36 g (typ.)




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