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2SK2776 データシート(PDF) 1 Page - Toshiba Semiconductor

部品番号 2SK2776
部品情報  Chopper Regulator, DC−DC Converter and Motor Drive Applications
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メーカー  TOSHIBA [Toshiba Semiconductor]
ホームページ  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SK2776 データシート(HTML) 1 Page - Toshiba Semiconductor

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2SK2776
2010-04-06
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2776
Chopper Regulator, DC−DC Converter and Motor Drive
Applications
Low drain−source ON-resistance
: RDS (ON) = 0.75 Ω (typ.)
High forward transfer admittance
: |Yfs| = 7.0 S (typ.)
Low leakage current
: IDSS = 100 μA (max) (VDS = 500 V)
Enhancement mode
: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
VDSS
500
V
Drain−gate voltage (RGS = 20 kΩ)
VDGR
500
V
Gate−source voltage
VGSS
±30
V
DC (Note 1)
ID
8
A
Drain current
Pulse (Note 1)
IDP
32
A
Drain power dissipation (Tc = 25°C)
PD
65
W
Single pulse avalanche energy
(Note 2)
EAS
312
mJ
Avalanche current
IAR
8
A
Repetitive avalanche energy (Note 3)
EAR
6.5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch−c)
1.92
°C / W
Thermal resistance, channel to ambient
Rth (ch−a)
83.3
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 8.3 mH, RG = 25 Ω,
IAR = 8 A
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC
JEITA
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
JEDEC
JEITA
TOSHIBA
2-10S2B
Weight: 1.5 g (typ.)


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