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TPC6103 データシート(PDF) 2 Page - Toshiba Semiconductor

部品番号 TPC6103
部品情報  Notebook PC Applications Portable Equipment Applications
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メーカー  TOSHIBA [Toshiba Semiconductor]
ホームページ  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPC6103 データシート(HTML) 2 Page - Toshiba Semiconductor

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TPC6103
2006-11-16
2
Electrical Characteristics (Ta
= 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±8 V, VDS = 0 V
±10
µA
Drain cut-off current
IDSS
VDS = −12 V, VGS = 0 V
−10
µA
V (BR) DSS
ID = −10 mA, VGS = 0 V
−12
Drain-source breakdown voltage
V (BR) DSX
ID = −10 mA, VGS = 8 V
−4
V
Gate threshold voltage
Vth
VDS = −10 V, ID = −200 µA
−0.5
−1.2
V
RDS (ON)
VGS = −1.8 V, ID = −1.4 A
65
90
RDS (ON)
VGS = −2.5 V, ID = −2.8 A
42
55
Drain-source ON resistance
RDS (ON)
VGS = −4.5 V, ID = −2.8 A
29
35
m
Forward transfer admittance
|Yfs|
VDS = −10 V, ID = −2.8 A
6.5
13
S
Input capacitance
Ciss
1520
Reverse transfer capacitance
Crss
330
Output capacitance
Coss
VDS = −10 V, VGS = 0 V, f = 1 MHz
380
pF
Rise time
tr
9.5
Turn-on time
ton
16
Fall time
tf
28
Switching time
Turn-off time
toff
Duty <= 1%, tw = 10 µs
74
ns
Total gate charge
(gate-source plus gate-drain)
Qg
20
Gate-source charge
Qgs
15
Gate-drain (“miller”) charge
Qgd
VDD ∼− −10 V, VGS = −5 V,
ID = −5.5 A
5
nC
Source-Drain Ratings and Characteristics (Ta
= 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Drain reverse
current
Pulse (Note 1)
IDRP
−22
A
Forward voltage (diode)
VDSF
IDR = −5.5 A, VGS = 0 V
1.2
V
VDD ∼− −6 V
−5 V
VGS
0 V
ID = −2.8 A
VOUT


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