データシートサーチシステム |
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TPCS8102 データシート(PDF) 3 Page - Toshiba Semiconductor |
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TPCS8102 データシート(HTML) 3 Page - Toshiba Semiconductor |
3 / 7 page TPCS8102 2006-11-16 3 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min. Typ. Max. Unit Gate leakage current IGSS VGS = ±10 V, VDS = 0 V ⎯ ⎯ ±10 μA Drain cut-off current IDSS VDS = −20 V, VGS = 0 V ⎯ ⎯ −10 μA V (BR) DSS ID = −10 mA, VGS = 0 V −20 ⎯ ⎯ Drain-source breakdown voltage V (BR) DSX ID = −10 mA, VGS = 12 V −8 ⎯ ⎯ V Gate threshold voltage Vth VDS = −10 V, ID = −200 μA −0.5 ⎯ −1.2 V RDS (ON) VGS = −2.0 V, ID = −3 A ⎯ 30 60 RDS (ON) VGS = −2.5 V, ID = −3 A ⎯ 23 38 Drain-source ON resistance RDS (ON) VGS = −4 V, ID = −3 A ⎯ 16 20 mΩ Forward transfer admittance |Yfs| VDS = −10 V, ID = −3 A 8.5 17 ⎯ S Input capacitance Ciss ⎯ 2740 ⎯ pF Reverse transfer capacitance Crss ⎯ 780 ⎯ pF Output capacitance Coss VDS = −10 V, VGS = 0 V, f = 1 MHz ⎯ 1030 ⎯ pF Rise time tr ⎯ 7.6 ⎯ Turn-on time ton ⎯ 16 ⎯ Fall time tf ⎯ 110 ⎯ Switching time Turn-off time toff Duty <= 1%, tw = 10 μs ⎯ 230 ⎯ ns Total gate charge (gate-source plus gate-drain) Qg ⎯ 37 ⎯ nC Gate-source charge Qgs ⎯ 27 ⎯ nC Gate-drain (“miller”) charge Qgd VDD ≈ −16 V, VGS = −5 V, ID = −6 A ⎯ 10 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min. Typ. Max. Unit Drain reverse current Pulse (Note 1) IDRP — — — −24 A Forward voltage (diode) VDSF IDR = −6 A, VGS = 0 V — — 1.2 V VDD ∼− −10 V 0 V VGS −5V ID = −3 A VOUT |
同様の部品番号 - TPCS8102 |
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