TPC8A02-H datasheet(6/8 Pages) TOSHIBA

部品番号	TPC8A02-H

部品情報	竊큀SHIBA Field Effect Transistor with Built-in Schottky Barrier Diode High-Efficiency DC/DC Converter Applications

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メーカー	TOSHIBA [Toshiba Semiconductor]

ホームページ	http://www.semicon.toshiba.co.jp/eng

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6 / 8 page

TPC8A02-H

2006-11-16

6

Safe operating area

Drain-source voltage VDS (V)

0.1

1000

1

10

100

0.1

10

1

0.001

10

100

1000

0.01

0.1

1

10

100

1000

(2)

(1)

0.1

rth – tw

Pulse width tw (s)

Single - pulse

(1) Device mounted on a glass-epoxy board

(a) (Note 2a)

(2) Device mounted on a glass-epoxy board

(b) (Note 2b)

VDSS max

t =1 ms *

ID max (Pulse) *

10 ms *

*

Single - pulse

Ta

= 25°C

Curves must be derated

linearly with increase in

temperature.

同様の部品番号 - TPC8A02-H

メーカー	部品番号	データシート	部品情報
VBsemi Electronics Co.,...	TPC8A02-H	993Kb / 9P	N-Channel 30-V (D-S) MOSFET

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