TPC6107 datasheet(2/7 Pages) TOSHIBA

部品番号	TPC6107

部品情報	Silicon P Channel MOS Type (U-MOSIV) Notebook PC Applications

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メーカー	TOSHIBA [Toshiba Semiconductor]

ホームページ	http://www.semicon.toshiba.co.jp/eng

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2 / 7 page

TPC6107

2006-11-17

2

Electrical Characteristics (Ta

= 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±10 V, VDS = 0 V

⎯

±10

µA

Drain cut-OFF current

IDSS

VDS = −20 V, VGS = 0 V

⎯

−10

µA

V (BR) DSS

ID = −10 mA, VGS = 0 V

−20

⎯

Drain-source breakdown voltage

V (BR) DSX

ID = −10 mA, VGS = 12 V

−8

⎯

V

Gate threshold voltage

Vth

VDS = −10 V, ID = −200 µA

−0.5

⎯

−1.2

V

RDS (ON)

VGS = −2 V, ID = −2.2 A

⎯

110

180

RDS (ON)

VGS = −2.5 V, ID = −2.2 A

⎯

70

100

Drain-source ON resistance

RDS (ON)

VGS = −4.5 V, ID = −2.2 A

⎯

40

55

m

Ω

Forward transfer admittance

|Yfs|

VDS = −10 V, ID = −2.2 A

4.8

9.6

⎯

S

Input capacitance

Ciss

⎯

680

⎯

Reverse transfer capacitance

Crss

⎯

130

⎯

Output capacitance

Coss

VDS = −10 V, VGS = 0 V, f = 1 MHz

⎯

140

⎯

pF

Rise time

tr

⎯

6

⎯

Turn-ON time

ton

⎯

16

⎯

Fall time

tf

⎯

38

⎯

Switching time

Turn-OFF time

toff

Duty <

= 1%, tw = 10 µs

⎯

85

⎯

ns

Total gate charge

(gate-source plus gate-drain)

Qg

⎯

9.8

⎯

Gate-source charge

Qgs

⎯

2

⎯

Gate-drain (“miller”) charge

Qgd

VDD ∼

− −16 V, VGS = −5 V,

ID = −4.5 A

⎯

3

⎯

nC

Source-Drain Ratings and Characteristics (Ta

= 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Pulse drain reverse current

(Note 1)

IDRP

⎯

−18

A

Forward voltage (diode)

VDSF

IDR = −4.5 A, VGS = 0 V

⎯

1.2

V

Marking (Note 5)

VDD ∼

− −10 V

−5 V

VGS

0 V

ID = −2.2 A

VOUT

Part No.

(or abbreviation code)

S3G

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

Lot code (month)

Lot No.

Pin #1

Lot code

(year)

Product-specific code

同様の部品番号 - TPC6107

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