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TPCP8302 データシート(PDF) 6 Page - Toshiba Semiconductor |
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TPCP8302 データシート(HTML) 6 Page - Toshiba Semiconductor |
6 / 7 page TPCP8302 2008-12-21 6 rth − tw (1) (2) (3) (4) Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) 0.001 0.01 0.1 1 10 100 1000 1 10 100 1000 Single pulse Pulse width tw (s) Drain −source voltage VDS (V) Safe operating area 10 ms * 1 ms * VDSS max −0.1 −1 −10 −100 −0.1 −1 −10 −100 ID max (Pulse) * * Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature. Single-device value at dual operation (Note 3b) |
同様の部品番号 - TPCP8302 |
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同様の説明 - TPCP8302 |
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