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TPCA8011-H データシート(PDF) 1 Page - Toshiba Semiconductor

部品番号 TPCA8011-H
部品情報  High Efficiency DC竊뢈C Converter Applications
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メーカー  TOSHIBA [Toshiba Semiconductor]
ホームページ  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPCA8011-H データシート(HTML) 1 Page - Toshiba Semiconductor

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TPCA8011-H
2006-11-16
1
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-speed U-MOSIII)
TPCA8011-H
High Efficiency DC/DC Converter Applications
Notebook PC Applications
Portable-Equipment Applications
• Small footprint due to a small and thin package
• High speed switching
• Small gate charge: QSW =16 nC (typ.)
• Low drain-source ON-resistance: RDS (ON) = 2.7 mΩ (typ.)
• High forward transfer admittance: |Yfs| =120 S (typ.)
• Low leakage current: IDSS = 10 µA (max) (VDS = 20 V)
• Enhancement mode: Vth = 0.6 to 1.3 V (VDS = 10 V, ID = 200 μA)
Absolute Maximum Ratings (Ta
= 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
20
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
20
V
Gate-source voltage
VGSS
±12
V
DC
(Note 1)
ID
40
Drain current
Pulsed (Note 1)
IDP
120
A
Drain power dissipation (Tc=25℃)
PD
45
W
Drain power dissipation
(t
= 10 s)
(Note 2a)
PD
2.8
W
Drain power dissipation
(t
= 10 s)
(Note 2b)
PD
1.6
W
Single-pulse avalanche energy
(Note 3)
EAS
208
mJ
Avalanche current
IAR
40
A
Repetitive avalanche energy
(Tc=25℃) (Note 4)
EAR
2.0
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
0.5±0.1
1.27
0.4±0.1
0.595
0.05 M A
1
4
5
8
0.15±0.05
0.8±0.1
1.1±0.2
4.25±0.2
1
4
5
8
5.0±0.2
0.95±0.05
S
0.05 S
A
0.166±0.05
1,2,3:SOURCE
4:GATE
5,6,7,8:DRAIN
JEDEC
JEITA
TOSHIBA
2-5Q1A
Weight: 0.069 g (typ.)
Circuit Configuration
8
6
1
2
3
7
5
4


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