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TPCA8011-H データシート(PDF) 1 Page - Toshiba Semiconductor |
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TPCA8011-H データシート(HTML) 1 Page - Toshiba Semiconductor |
1 / 7 page TPCA8011-H 2006-11-16 1 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-speed U-MOSIII) TPCA8011-H High Efficiency DC/DC Converter Applications Notebook PC Applications Portable-Equipment Applications • Small footprint due to a small and thin package • High speed switching • Small gate charge: QSW =16 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 2.7 mΩ (typ.) • High forward transfer admittance: |Yfs| =120 S (typ.) • Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) • Enhancement mode: Vth = 0.6 to 1.3 V (VDS = 10 V, ID = 200 μA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 20 V Drain-gate voltage (RGS = 20 kΩ) VDGR 20 V Gate-source voltage VGSS ±12 V DC (Note 1) ID 40 Drain current Pulsed (Note 1) IDP 120 A Drain power dissipation (Tc=25℃) PD 45 W Drain power dissipation (t = 10 s) (Note 2a) PD 2.8 W Drain power dissipation (t = 10 s) (Note 2b) PD 1.6 W Single-pulse avalanche energy (Note 3) EAS 208 mJ Avalanche current IAR 40 A Repetitive avalanche energy (Tc=25℃) (Note 4) EAR 2.0 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: For Notes 1 to 4, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. Unit: mm 0.5±0.1 1.27 0.4±0.1 0.595 0.05 M A 1 4 5 8 0.15±0.05 0.8±0.1 1.1±0.2 4.25±0.2 1 4 5 8 5.0±0.2 0.95±0.05 S 0.05 S A 0.166±0.05 1,2,3:SOURCE 4:GATE 5,6,7,8:DRAIN JEDEC ― JEITA ― TOSHIBA 2-5Q1A Weight: 0.069 g (typ.) Circuit Configuration 8 6 1 2 3 7 5 4 |
同様の部品番号 - TPCA8011-H |
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同様の説明 - TPCA8011-H |
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