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TPC8116-H データシート(PDF) 1 Page - Toshiba Semiconductor |
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TPC8116-H データシート(HTML) 1 Page - Toshiba Semiconductor |
1 / 7 page TPC8116-H 2006-01-17 1 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8116-H High Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications CCFL Inverter Applications • Small footprint due to a small and thin package • High speed switching • Small gate charge: QSW = 9.7 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 24mΩ (typ.) • High forward transfer admittance: |Yfs| =14 S (typ.) • Low leakage current: IDSS = −10 µA (max) (VDS = −40 V) • Enhancement mode: Vth =−0.8 to−2.0 V (VDS =−10 V, ID =−1 mA) Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS −40 V Drain-gate voltage (RGS = 20 kΩ) VDGR −40 V Gate-source voltage VGSS ±20 V DC (Note 1) ID −7.5 Drain current Pulsed (Note 1) IDP −30 A Drain power dissipation (t = 10 s) (Note 2a) PD 1.9 W Drain power dissipation (t = 10 s) (Note 2b) PD 1.0 W Single-pulse avalanche energy (Note 3) EAS 26 mJ Avalanche current IAR −7.5 A Repetitive avalanche energy (Note 2a) (Note 4) EAR 0.12 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: For Notes 1 to 4, refer to the next page. This transistor is an electrostatic-sensitive device. Handle with care. Unit: mm JEDEC ⎯ JEITA ⎯ TOSHIBA 2-6J1B Weight: 0.085 g (typ.) Circuit Configuration 8 6 1 2 3 7 5 4 |
同様の部品番号 - TPC8116-H |
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同様の説明 - TPC8116-H |
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