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TPC8009-H データシート(PDF) 3 Page - Toshiba Semiconductor

部品番号 TPC8009-H
部品情報  High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable-Equipment Applications
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メーカー  TOSHIBA [Toshiba Semiconductor]
ホームページ  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPC8009-H データシート(HTML) 3 Page - Toshiba Semiconductor

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TPC8009-H
2006-11-16
3
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
±10
μA
Drain cutoff current
IDSS
VDS = 30 V, VGS = 0 V
10
μA
V (BR) DSS
ID = 10 mA, VGS = 0 V
30
Drain-source breakdown voltage
V (BR) DSX
ID = 10 mA, VGS = −20 V
15
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
1.1
2.3
V
VGS = 4.5 V, ID = 6.5 A
11
15
Drain-source ON-resistance
RDS (ON)
VGS = 10 V, ID = 6.5 A
8
10
m
Ω
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 6.5 A
8
16
S
Input capacitance
Ciss
1460
Reverse transfer capacitance
Crss
250
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
600
pF
Rise time
tr
5
Turn-on time
ton
13
Fall time
tf
12
Switching time
Turn-off time
toff
Duty <= 1%, tw = 10 μs
37
ns
VDD ∼− 24 V, VGS = 10 V, ID = 13 A
29
Total gate charge
(gate-source plus gate-drain)
Qg
VDD ∼− 24 V, VGS = 5 V, ID = 13 A
16
Gate-source charge 1
Qgs1
4.2
Gate-drain (“Miller”) charge
Qgd
7.3
Gate switch charge
QSW
VDD ∼− 24 V, VGS = 10 V, ID = 13 A
9.1
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Drain reverse current
Pulse
(Note 1)
IDRP
52
A
Forward voltage (diode)
VDSF
IDR = 13 A, VGS = 0 V
−1.2
V
VDD ∼− 15 V
0 V
VGS
10 V
ID = 6.5 A
VOUT


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