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TPCF8B01 データシート(PDF) 1 Page - Toshiba Semiconductor |
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TPCF8B01 データシート(HTML) 1 Page - Toshiba Semiconductor |
1 / 9 page TPCF8B01 2009-09-29 1 TOSHIBA Multi-Chip Device Silicon P Channel MOS Type (U-MOS III) / Schottky Barrier Diode TPCF8B01 Notebook PC Applications Portable Equipment Applications • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) • High forward transfer admittance: |Yfs| = 4.7 S (typ.) • Low leakage current: IDSS =-10 μA (max) (VDS = -20 V) • Enhancement-model: Vth = -0.5 to-1.2 V (VDS =-10 V, ID = -200 μA) • Low forward voltage: VFM(2) = 0.46 V (typ.) Absolute Maximum Ratings MOSFET (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS -20 V Drain-gate voltage (RGS = 20 kΩ) VDGR -20 V Gate-source voltage VGSS ±8 V DC (Note 1) ID -2.7 Drain current Pulse (Note 1) IDP -10.8 A Single pulse avalanche energy (Note 4) EAS 1.2 mJ Avalanche current IAR -1.35 A Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) EAR 0.11 mJ SBD (Ta = 25°C) Characteristics Symbol Rating Unit Repetitive peak reverse voltage VRRM 20 V Average forward current (Note 2a, 6) IF(AV) 1.0 A Peak one cycle surge forward current (non-repetitive) IFSM 7(50Hz) A Absolute Maximum Ratings for MOSFET and SBD (Ta = 25°C) Characteristics Symbol Rating Unit Single-device operation (Note 3a) PD (1) 1.35 Drain power dissipation (t = 5 s) (Note 2a) Single-device value at dual operation (Note 3b) PD (2) 1.12 Single-device operation (Note 3a) PD (1) 0.53 Drain power dissipation (t = 5 s) (Note 2b) Single-device value at dual operation (Note 3b) PD (2) 0.33 W Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C Note: For (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) and (Note 6), please refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Unit: mm JEDEC ― JEITA ― TOSHIBA 2-3U1C Weight: 0.011 g (typ.) Circuit Configuration 1 2 3 4 8 7 6 5 |
同様の部品番号 - TPCF8B01 |
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同様の説明 - TPCF8B01 |
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