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TPCF8B01 データシート(PDF) 1 Page - Toshiba Semiconductor

部品番号 TPCF8B01
部品情報  Notebook PC Applications Portable Equipment Applications
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メーカー  TOSHIBA [Toshiba Semiconductor]
ホームページ  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPCF8B01 データシート(HTML) 1 Page - Toshiba Semiconductor

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TPCF8B01
2009-09-29
1
TOSHIBA Multi-Chip Device Silicon P Channel MOS Type (U-MOS III) / Schottky Barrier Diode
TPCF8B01
Notebook PC Applications
Portable Equipment Applications
• Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 4.7 S (typ.)
• Low leakage current: IDSS =-10 μA (max) (VDS = -20 V)
• Enhancement-model: Vth = -0.5 to-1.2 V (VDS =-10 V, ID = -200 μA)
• Low forward voltage: VFM(2) = 0.46 V (typ.)
Absolute Maximum Ratings
MOSFET (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
-20
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
-20
V
Gate-source voltage
VGSS
±8
V
DC
(Note 1)
ID
-2.7
Drain current
Pulse
(Note 1)
IDP
-10.8
A
Single pulse avalanche energy
(Note 4)
EAS
1.2
mJ
Avalanche current
IAR
-1.35
A
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
EAR
0.11
mJ
SBD (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Repetitive peak reverse voltage
VRRM
20
V
Average forward current (Note 2a, 6)
IF(AV)
1.0
A
Peak one cycle surge forward current
(non-repetitive)
IFSM
7(50Hz)
A
Absolute Maximum Ratings for MOSFET and SBD (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Single-device operation
(Note 3a)
PD (1)
1.35
Drain power
dissipation
(t
= 5 s) (Note 2a) Single-device value at
dual operation (Note 3b)
PD (2)
1.12
Single-device operation
(Note 3a)
PD (1)
0.53
Drain power
dissipation
(t
= 5 s) (Note 2b) Single-device value at
dual operation (Note 3b)
PD (2)
0.33
W
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
-55~150
°C
Note: For (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) and (Note 6), please refer to the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
TOSHIBA
2-3U1C
Weight: 0.011 g (typ.)
Circuit Configuration
1
2
3
4
8
7
6
5


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