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BC488BRL1 データシート(PDF) 2 Page - ON Semiconductor

部品番号 BC488BRL1
部品情報  High Current Transistors PNP Silicon
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メーカー  ONSEMI [ON Semiconductor]
ホームページ  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

BC488BRL1 データシート(HTML) 2 Page - ON Semiconductor

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BC488B
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 1)
(IC = −10 mAdc, IB = 0)
V(BR)CEO
−60
Vdc
Collector −Base Breakdown Voltage
(IC = −100 mAdc, IE = 0)
V(BR)CBO
−60
Vdc
Emitter −Base Breakdown Voltage
(IE = −10 mAdc, IC = 0)
V(BR)EBO
−4.0
Vdc
Collector Cutoff Current
(VCB = −40 Vdc, IE = 0)
ICBO
−100
nAdc
ON CHARACTERISTICS*
DC Current Gain
(IC = −10 mAdc, VCE = −2.0 Vdc)
(IC = −100 mAdc, VCE = −2.0 Vdc)
(IC = −1.0 Adc, VCE = −5.0 Vdc)
hFE
40
160
15
260
400
Collector −Emitter Saturation Voltage
(IC = −500 mAdc, IB = −50 mAdc)
(IC = −1.0 Adc, IB = −100 mAdc)
VCE(sat)
−0.25
−0.5
−0.5
Vdc
Base −Emitter Saturation Voltage
(IC = −500 mAdc, IB = −50 mAdc)
(IC = −1.0 Adc, IB = −100 mAdc)
VBE(sat)
−0.9
−1.0
−1.2
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = −50 mAdc, VCE = −2.0 Vdc, f = 100 MHz)
fT
150
MHz
Output Capacitance
(VCB = −10 Vdc, IE = 0, f = 1.0 MHz)
Cob
9.0
pF
Input Capacitance
(VEB = −0.5 Vdc, IC = 0, f = 1.0 MHz)
Cib
110
pF
1.
Pulse Test: Pulse Width = 300
ms, Duty Cycle 2%.
Figure 1. Switching Time Test Circuits
*Total Shunt Capacitance of Test Jig and Connectors
For PNP Test Circuits, Reverse All Voltage Polarities
5.0 ms
+10 V
0
Vin
5.0 mF
100
100
TURN−ON TIME
−1.0 V
VCC
+40 V
RL
OUTPUT
*CS < 6.0 pF
tr = 3.0 ns
5.0 ms
Vin
5.0 mF
100
100
TURN−OFF TIME
+VBB
VCC
+40 V
RL
OUTPUT
*CS < 6.0 pF
tr = 3.0 ns
RB
RB


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