BC847BTT1 datasheet(1/6 Pages) ONSEMI

部品番号	BC847BTT1

部品情報	General Purpose Transistors NPN Silicon

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June, 2004 − Rev. 1

1

Publication Order Number:

BC847ATT1/D

BC847ATT1, BC847BTT1,

BC847CTT1

General Purpose

Transistors

NPN Silicon

These transistors are designed for general purpose amplifier

applications. They are housed in the SC−75/SOT−416 package which

is designed for low power surface mount applications.

Features

• Pb−Free Packages are Available*

MAXIMUM RATINGS (TA = 25°C)

Rating

Symbol

Max

Unit

Collector−Emitter Voltage

VCEO

45

V

Collector−Base Voltage

VCBO

50

V

Emitter−Base Voltage

VEBO

6.0

V

Collector Current − Continuous

IC

100

mAdc

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits

are exceeded, device functional operation is not implied, damage may occur

and reliability may be affected.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation,

FR−4 Board (Note 1)

TA = 25°C

Derated above 25

°C

PD

200

1.6

mW

mW/

°C

Thermal Resistance,

Junction−to−Ambient (Note 1)

RqJA

600

°C/W

Total Device Dissipation,

FR−4 Board (Note 2)

TA = 25°C

Derated above 25

°C

PD

300

2.4

mW

mW/

°C

Thermal Resistance,

Junction−to−Ambient (Note 2)

RqJA

400

°C/W

Junction and Storage

Temperature Range

TJ, Tstg

−55 to

+150

°C

1. FR−4 @ min pad.

2. FR−4 @ 1.0

× 1.0 in pad.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

CASE 463

SC−75/SOT−41

6

STYLE 1

MARKING DIAGRAM

3

2

1

COLLECTOR

3

1

BASE

2

EMITTER

http://onsemi.com

xxM

xx = Device Code

M = Date Code

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

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