BCX71JLT1G datasheet(5/6 Pages) ONSEMI

部品番号	BCX71JLT1G

部品情報	General Purpose Transistor PNP Silicon

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BCX71JLT1G

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5

TYPICAL DYNAMIC CHARACTERISTICS

Figure 13. Current−Gain — Bandwidth Product

IC, COLLECTOR CURRENT (mA)

Figure 14. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

500

0.5

10

50

70

100

200

300

0.7 1.0

2.0

3.0

5.0 7.0

10

20

30

50

TJ = 25°C

VCE = 20 V

5.0 V

1.0

2.0

3.0

5.0

7.0

0.1

0.2

0.5

1.0

2.0

5.0

10

20

50

0.05

Cib

Cob

TJ = 25°C

Figure 15. Input Impedance

IC, COLLECTOR CURRENT (mA)

Figure 16. Output Admittance

IC, COLLECTOR CURRENT (mA)

2.0

5.0

10

20

50

1.0

0.2

100

0.3

0.5

0.7

1.0

2.0

3.0

5.0

7.0

10

20

0.1

0.2

0.5

VCE = -10 Vdc

f = 1.0 kHz

TA = 25°C

2.0

5.0

10

20

50

1.0

2.0

100

3.0

5.0

7.0

10

20

30

50

70

100

200

0.1

0.2

0.5

VCE = 10 Vdc

f = 1.0 kHz

TA = 25°C

hfe ≈ 200

@ IC = −1.0 mA

hfe ≈ 200

@ IC = 1.0 mA

TJ, JUNCTION TEMPERATURE (°C)

104

-4

0

Figure 17. Typical Collector Leakage Current

10-2

10-1

100

101

102

103

-2

0

+ 20

+ 40

+ 60

+ 80 + 100 + 120 + 140+ 160

VCC = 30 V

ICEO

ICBO

AND

ICEX @ VBE(off) = 3.0 V

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