BD179G datasheet(3/4 Pages) ONSEMI

部品番号	BD179G

部品情報	Plastic Medium-Power NPN Silicon Transistor

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BD179

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3

Figure 2. Collector Saturation Region

IB, BASE CURRENT (mA)

1.0

0

0.2

0.8

0.6

0.4

0.2

1.0

2.0

10

30

50

200

IC = 0.1 A

0.25 A

1.0 A

0.5 A

0.3

0.5

100

20

3.0

5.0

TJ = 25°C

1000

Figure 3. Current Gain

IC, COLLECTOR CURRENT (mA)

10

100

TJ = + 150°C

TJ = + 55°C

VCE = 2.0 V

700

500

300

200

70

50

30

20

TJ = + 25°C

3.0 5.0

10

20 30

50

2000

2.0

100

200

1000

300 500

Figure 4. “On” Voltages

0

1.5

3.0 5.0

10

20 30

50

2000

2.0

100

200

1000

300 500

1.2

0.9

0.6

0.3

IC, COLLECTOR CURRENT (mA)

TJ = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE @ VCE = 2.0 V

Figure 5. Thermal Response

t, TIME or PULSE WIDTH (ms)

1.0

0.01

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

0.02 0.03

0.05

0.1

0.2 0.3

0.5

1.0

2.0 3.0

5.0

10

20

30

50

100

200 300

1000

500

qJC(t) = r(t) qJC

qJC = 4.16°C/W MAX

qJC = 3.5°C/W TYP

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) qJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

D = 0.5

SINGLE PULSE

D = 0.2

D = 0.1

D = 0.05

D = 0.01

同様の部品番号 - BD179G

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ON Semiconductor	BD179G	101Kb / 4P	Plastic Medium-Power Silicon NPN Transistor Noember, 2013 ??Rev. 15

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