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CSD17311Q5 データシート(PDF) 1 Page - Texas Instruments |
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CSD17311Q5 データシート(HTML) 1 Page - Texas Instruments |
1 / 10 page 1 D 2 D 3 D 4 D D 5 G 6 S 7 S 8 S P0094-01 VGS - Gate-to-Source Voltage - V 0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 TC = 25°C TC = 125°C G006 ID = 30A Qg - Gate Charge - nC 0 5 10 15 20 25 30 35 40 0 1 2 3 4 5 6 7 8 G003 ID = 30A VDS = 15V CSD17311Q5 www.ti.com SLPS257 – MARCH 2010 30V N-Channel NexFET™ Power MOSFET Check for Samples: CSD17311Q5 PRODUCT SUMMARY 1 FEATURES VDS Drain to Source Voltage 30 V 2 • Optimized for 5V Gate Drive Qg Gate Charge Total (4.5V) 24 nC • Ultra Low Qg and Qgd Qgd Gate Charge Gate to Drain 5.2 nC • Low Thermal Resistance VGS = 3V 2.3 m Ω • Avalanche Rated RDS(on) Drain to Source On Resistance VGS = 4.5V 1.8 m Ω VGS = 8V 1.6 m Ω • Pb Free Terminal Plating VGS(th) Threshold Voltage 1.2 V • RoHS Compliant • Halogen Free • SON 5-mm × 6-mm Plastic Package ORDERING INFORMATION Device Package Media Qty Ship APPLICATIONS SON 5-mm × 6-mm 13-Inch Tape and CSD17311Q5 2500 Plastic Package Reel Reel • Notebook Point-of-Load • Point-of-Load Synchronous Buck in Networking, Telecom and Computing Systems ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VALUE UNIT DESCRIPTION VDS Drain to Source Voltage 30 V The NexFET™ power MOSFET has been designed VGS Gate to Source Voltage +10 / –8 V to minimize losses in power conversion applications, Continuous Drain Current, TC = 25°C 100 A and optimized for 5V gate drive applications. ID Continuous Drain Current(1) 32 A Top View IDM Pulsed Drain Current, TA = 25°C (2) 200 A PD Power Dissipation(1) 3.2 W TJ, Operating Junction and Storage –55 to 150 °C TSTG Temperature Range Avalanche Energy, Single Pulse EAS 638 mJ ID = 113A, L = 0.1mH, RG = 25Ω (1) Typical RqJA = 40°C/W when mounted on a 1-inch 2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 0.06-inch (1.52-mm) thick FR4 PCB. (2) Pulse duration ≤300ms, duty cycle ≤2% TextAddedForSpacing Text_added_for_spacing_Text_added_for_spacing RDS(on) vs VGS GATE CHARGE 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. 2 NexFET is a trademark of Texas Instruments. PRODUCTION DATA information is current as of publication date. Copyright © 2010, Texas Instruments Incorporated Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. |
同様の部品番号 - CSD17311Q5 |
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同様の説明 - CSD17311Q5 |
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