データシートサーチシステム |
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UF1007E データシート(PDF) 1 Page - Gulf Semiconductor |
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UF1007E データシート(HTML) 1 Page - Gulf Semiconductor |
1 / 2 page Rev.1 www.gulfsemi.com UF1001E THRU UF1007E ULTRAFAST EFFICIENT PLASTIC SILICON RECTIFIER VOLTAGE: : : :50 TO 1000V CURRENT: : : : 1.0A FEATURE A405 Low power loss High surge capability Glass passivated chip junction Ultra-fast recovery time for high efficiency High temperature soldering guaranteed 250℃/10sec/0.375″lead length at 5 lbs tension MECHANICAL DATA Terminal:Plated axial leads solderable per MIL-STD 202E, method 208C Case:Molded with UL-94 Class V-0 recognized Flame Retardant Epoxy Polarity:color band denotes cathode Mounting position:any Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (single-phase, half -wave, 60HZ, resistive or inductive load rating at 25℃, unless otherwise stated) SYMBOL UF1 001E UF1 002E UF1 003E UF1 004E UF1 005E UF1 006E UF1 007E units Maximum Recurrent Peak Reverse Voltage Vrrm 50 100 200 400 600 800 1000 V Maximum RMS Voltage Vrms 35 70 140 280 420 560 700 V Maximum DC blocking Voltage Vdc 50 100 200 400 600 800 1000 V Maximum Average Forward Rectified Current 3/8″lead length at Ta =55℃ If(av) 1.0 A Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load Ifsm 30.0 A Maximum Forward Voltage at Forward current 1A Peak Vf 1.0 1.3 1.7 V Maximum DC Reverse Current Ta =25℃ at rated DC blocking voltage Ta =120℃ Ir 5.0 100.0 μA μA Maximum Reverse Recovery Time (Note 1) Trr 50 75 nS Typical Junction Capacitance (Note 2) Cj 20 10 pF Typical Thermal Resistance (Note 3) R(ja) 25.0 ℃/W Storage and Operating Junction Temperature Tstg,Tj -55 to +150 ℃ Note: 1. Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A 2. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc 3. Thermal Resistance from Junction to Ambient at 3/8″lead length, P.C. Board Mounted |
同様の部品番号 - UF1007E |
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同様の説明 - UF1007E |
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