SIA517DJ datasheet(10/12 Pages) VISHAY

部品番号	SIA517DJ

部品情報	N- and P-Channel 12-V (D-S) MOSFET

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メーカー	VISHAY [Vishay Siliconix]

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Document Number: 64832

S09-0861-Rev. A, 18-May-09

Vishay Siliconix

SiA517DJ

New Product

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

limit.

Current Derating*

0

2

4

6

8

10

12

0

25

50

75

100

125

150

Package Limited

TC - Case Temperature (°C)

Power Derating

0

2

4

6

8

25

50

75

100

125

150

TC - Case Temperature (°C)

同様の部品番号 - SIA517DJ

メーカー	部品番号	データシート	部品情報
Vishay Telefunken	SIA517DJ	323Kb / 14P	N- and P-Channel 12-V (D-S) MOSFET
Guangdong Kexin Industr...	SIA517DJ	3Mb / 10P	Complementary Trench MOSFET
Vishay Siliconix	SIA517DJ	326Kb / 14P	N- and P-Channel 12-V (D-S) MOSFET 01-Jan-2022
Vishay Siliconix	SIA517DJ	326Kb / 14P	N- and P-Channel 12-V (D-S) MOSFET 01-Jan-2022

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同様の説明 - SIA517DJ

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Vishay Siliconix	SI7540DP	361Kb / 16P	N- and P-Channel 12-V (D-S) MOSFET Rev. F, 09-Feb-09
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Vishay Siliconix	SI7540DP	534Kb / 15P	N- and P-Channel 12-V (D-S) MOSFET Rev. F, 09-Feb-09