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LMH6629SDE データシート(PDF) 6 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
部品番号 LMH6629SDE
部品情報  Ultra-Low Noise, High Speed Operational Amplifier
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メーカー  NSC [National Semiconductor (TI)]
ホームページ  http://www.national.com
Logo NSC - National Semiconductor (TI)

LMH6629SDE データシート(HTML) 6 Page - National Semiconductor (TI)

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Symbol
Parameter
Conditions
Min
(Note 5)
Typ
(Note 5)
Max
(Note 5)
Units
I
BI
Input Bias Current
(Note 6)
−15
−23
−35
μA
I
OS
Input Offset Current
±0.13
±1.8
±3.0
μA
T
CIOS
Input offset voltage
temperature drift
(Note 7)
±3.2
nA/°C
C
CM
Input Capacitance
Common Mode
1.7
pF
R
CM
Input Resistance
Common Mode
1
M
MISCELLANEOUS PARAMETERS
CMRR
Common Mode Rejection
Ratio
V
CM from 0V to 2.0V
84
81
87
dB
PSRR
Power supply rejection ratio
82
79
84
A
VOL
Open Loop Gain
78
73
79
DIGITAL INPUTS/TIMING
V
IL
Logic low-voltage threshold
PD and COMP pins
0.8
V
V
IH
Logic high-voltage threshold
2.0
I
IL
Logic low-bias current
PD and COMP pins = 0.8V (Note 6)
-17
−14
−23
−28
−32
µA
I
IH
Logic high-bias current
PD and COMP pins = 2.0V (Note 6)
−16
−13
−22
−27
−31
T
en
Enable time
75
ns
T
dis
Disable time
80
POWER REQUIREMENTS
I
S
Supply Current
No Load, Normal Operation (PD Pin =
HI or open)
13.7
14.9
16.0
mA
No Load, Shutdown (PD Pin = LO)
0.89
1.4
1.5
Note 1: Absolute maximum ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see the Electrical Characteristics.
Note 2: Electrical table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating
of the device such that T
J = TA. No guarantee of parametric performance is indicated in the electrical tables under conditions of internal self-heating where TJ >
T
A.
Note 3: The maximum continuous output current (I
OUT) is determined by device power dissipation limitations. Continuous short circuit operation at elevated
ambient temperature can result in exceeding the maximum allowed junction temperature of 150°C
Note 4: Human Body Model, applicable std. JESD22-A114C. Machine Model, applicable std. JESD22-A115-A. Field Induced Charge Device Model, applicable
std. JESD22-C101-C.
Note 5: Typical numbers are the most likely parametric norm. Bold numbers refer to over-temperature limits.
Note 6: Negative input current implies current flowing out of the device.
Note 7: Drift determined by dividing the change in parameter at temperature extremes by the total temperature change.
www.national.com
6


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