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2SC3906K データシート(PDF) 1 Page - Rohm |
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2SC3906K データシート(HTML) 1 Page - Rohm |
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1 / 1 page 2SC4102 / 2SC3906K / 2SC2389S Transistors High-voltage Amplifier Transistor (120V, 50mA) 2SC4102 / 2SC3906K / 2SC2389S ! ! ! ! Features 1) High breakdown voltage. (BVCEO = 120V) 2) Complements the 2SA1579 / 2SA1514K / 2SA1038S. ! ! ! ! Absolute maximum ratings (Ta=25 °C) Parameter Symbol 2SC4102 / 2SC3906K 2SC2389S VCBO VCEO VEBO IC PC Tj Tstg Limits 120 120 5 50 0.2 0.3 150 −55~+150 Unit V V V mA W °C °C Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature ! ! ! ! Packaging specifications and hFE Type 2SC2389S SPT RS − TP 5000 2SC3906K SMT3 RS T ∗ T146 3000 2SC4102 UMT3 RS T ∗ T106 3000 Package hFE Code Marking Basic ordering unit (pieces) ∗Denotes hFE ! ! ! ! External dimensions (Units : mm) ROHM : SMT3 EIAJ : SC-59 JEDEC : SOT-346 2SC3906K (1) Emitter (2) Base (3) Collector ROHM : UMT3 EIAJ : SC-70 JEDEC : SOT-323 2SC4102 (1) Emitter (2) Base (3) Collector 1.25 2.1 0.1Min. Each lead has same dimensions 0.3Min. 2.8 1.6 ROHM : SPT EIAJ : SC-72 2SC2389S (1) Emitter (2) Collector (3) Base Each lead has same dimensions 0.45 2.5 (1) (2) (3) 5 0.45 0.5 42 Taping specifications ! ! ! ! Electrical characteristics (Ta=25 °C) Parameter Symbol Min. Typ. Max. Unit Conditions BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob 120 120 5 − − − 180 − − − − − − − − − 140 2.5 − − − 0.5 0.5 0.5 560 − − V V V µA µA V − MHz pF IC =50µA IC =1mA IE =50µA VCB =100V VEB =4V IC/IB =10mA/1mA VCE =6V, IC=2mA VCE =12V, IE=−2mA, f=100MHz VCB =12V, IE=0A, f=1MHz Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance |
同様の部品番号 - 2SC3906K |
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同様の説明 - 2SC3906K |
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