KM416V1000B datasheet(8/8 Pages) SAMSUNG

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KM416V1000B データシート(PDF) 8 Page - Samsung semiconductor

部品番号	KM416V1000B

部品情報	1M x 16Bit CMOS Dynamic RAM with Fast Page Mode

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メーカー	SAMSUNG [Samsung semiconductor]

ホームページ	http://www.samsung.com/Products/Semiconductor

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KM416C1000B, KM416C1200B

CMOS DRAM

KM416V1000B, KM416V1200B

tASC, tCAH are referenced to the earlier CAS rising edge.

tCP is specified from the last CAS rising edge in the previous cycle to the first CAS falling edge in the next cycle.

tCWD is referenced to the later CAS falling edge at word read-modify-write cycle.

tCWL is specified from W falling edge to the earlier CAS rising edge.

tCSR is referenced to earlier CAS falling low before RAS transition low.

tCHR is referenced to the later CAS rising high after RAS transition low.

tCSR

tCHR

RAS

LCAS

UCAS

16.

15.

14.

11.

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12.

17.

tDS, tDH is independently specified for lower byte DIN(0-7), upper byte DIN(8-15)

4096(4K Ref.)/1024(1K Ref.) of burst refresh must be executed within 16ms before and after self-refresh in order to meet

refresh specification (L-version).

10.

同様の部品番号 - KM416V1000B

メーカー	部品番号	データシート	部品情報
Samsung semiconductor	KM416V1000C	767Kb / 34P	1M x 16Bit CMOS Dynamic RAM with Fast Page Mode

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同様の説明 - KM416V1000B

メーカー	部品番号	データシート	部品情報
Samsung semiconductor	KM416C1000C	767Kb / 34P	1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
	K4F171611D	528Kb / 34P	1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
	KM416V4000B	767Kb / 35P	4M x 16bit CMOS Dynamic RAM with Fast Page Mode
	K4F661612D	390Kb / 35P	4M X 16BIT CMOS DYNAMIC RAM WITH FAST PAGE MODE
	K4F661612E	386Kb / 35P	4M x 16bit CMOS Dynamic RAM with Fast Page Mode
	KM416V4000C	88Kb / 9P	4M x 16bit CMOS Dynamic RAM with Fast Page Mode
	KM416C4000B	826Kb / 35P	4M x 16bit CMOS Dynamic RAM with Fast Page Mode
	KM416C4000C	901Kb / 35P	4M x 16bit CMOS Dynamic RAM with Fast Page Mode
	K4F661612C	844Kb / 35P	4M x 16bit CMOS Dynamic RAM with Fast Page Mode
	K4F661612B	844Kb / 35P	4M x 16bit CMOS Dynamic RAM with Fast Page Mode

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