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KM432S2030CT-F7 データシート(PDF) 6 Page - Samsung semiconductor

部品番号 KM432S2030CT-F7
部品情報  2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
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メーカー  SAMSUNG [Samsung semiconductor]
ホームページ  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM432S2030CT-F7 データシート(HTML) 6 Page - Samsung semiconductor

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KM432S2030C
CMOS SDRAM
REV. 1.1 Mar. '99
- 6 -
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, TA = 0 to 70
°C)
Parameter
Symbol
Test Condition
CAS
Latency
Version
Unit Note
-6
-7
-8
-10
Operating current
(One bank active)
ICC1
Burst length = 1
tRC
≥ tRC(min)
IOL = 0 mA
3
140
130
130
115
mA
1
2
-
-
130
115
Precharge standby current
in power-down mode
ICC2P
CKE
≤ VIL(max), tCC = 15ns
2
mA
ICC2PS
CKE & CLK
≤ VIL(max), tCC = ∞
2
Precharge standby current
in non power-down mode
ICC2N
CKE
≥ VIH(min), CS ≥ VIH(min), tCC = 15ns
Input signals are changed one time during 30ns
20
mA
ICC2NS
CKE
≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
10
mA
Active standby current in
power-down mode
ICC3P
CKE
≤ VIL(max), tCC = 15ns
3
mA
ICC3PS
CKE & CLK
≤ VIL(max), tCC = ∞
3
Active standby current in
non power-down mode
(One bank active)
ICC3N
CKE
≥ VIH(min), CS ≥ VIH(min), tCC = 15ns
Input signals are changed one time during 30ns
30
mA
ICC3NS
CKE
≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
20
mA
Operating current
(Burst mode)
ICC4
IOL = 0 mA
Page burst
2 Banks activated
3
200
180
150
130
mA
1
2
-
-
130
110
Refresh current
ICC5
tRC
≥ tRC(min)
3
200
180
160
150
mA
2
2
-
-
160
150
Self refresh current
ICC6
CKE
≤ 0.2V
2
mA
3
450
uA
4
1. Measured with outputs open.
2. Refresh period is 64ms.
3. KM432S2030CT-G**
4. KM432S2030CT-F**
Notes :
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = 0 to 70
°C)
Parameter
Symbol
Min
Typ
Max
Unit
Note
Supply voltage
VDD, VDDQ
3.0
3.3
3.6
V
Input logic high voltage
VIH
2.0
3.0
VDDQ+0.3
V
1
Input logic low voltage
VIL
-0.3
0
0.8
V
2
Output logic high voltage
VOH
2.4
-
-
V
IOH = -2mA
Output logic low voltage
VOL
-
-
0.4
V
IOL = 2mA
Input leakage current (Inputs)
IIL
-1
-
1
uA
3
Input leakage current (I/O pins)
IIL
-1.5
-
1.5
uA
3,4
1. VIH (max) = 5.6V AC.The overshoot voltage duration is
≤ 3ns.
2. VIL (min) = -2.0V AC. The undershoot voltage duration is
≤ 3ns.
3. Any input 0V
≤ VIN ≤ VDDQ,
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
4. Dout is disabled, 0V
≤ VOUT ≤ VDDQ.
5. The VDD condition of KM432S2030C-6 is 3.135V~3.6V.
Notes :


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