データシートサーチシステム |
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KM44C4005C データシート(PDF) 7 Page - Samsung semiconductor |
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KM44C4005C データシート(HTML) 7 Page - Samsung semiconductor |
7 / 20 page CMOS DRAM KM44C4005C, KM44C4105C TEST MODE CYCLE Parameter Symbol -5 -6 Units Notes Min Max Min Max Random read or write cycle time tRC 89 109 ns Read-modify-write cycle time tRWC 121 145 ns Access time from RAS tRAC 55 65 ns 3,4,10,12 Access time from CAS tCAC 18 20 ns 3,4,5,12 Access time from column address tAA 30 35 ns 3,10,12 RAS pulse width tRAS 55 10K 65 10K ns CAS pulse width tCAS 13 10K 15 10K ns RAS hold time tRSH 18 20 ns CAS hold time tCSH 43 50 ns Column address to RAS lead time tRAL 30 35 ns CAS to W delay time tCWD 35 39 ns 7 RAS to W delay time tRWD 72 84 ns 7 Column address to W delay time tAWD 47 54 ns 7 CAS precharge to W delay time tCPWD 52 59 ns 7 Hyper Page mode cycle time tHPC 25 30 ns 14 Hyper Page read-modify-write cycle time tHPRWC 52 61 ns 14 RAS pulse width (Hyper Page cycle) tRASP 55 200K 65 200K ns Access time from CAS precharge tCPA 33 40 ns 3 OE access time tOEA 18 20 ns OE to data delay tOED 18 20 ns OE command hold time tOEH 18 20 ns ( Note 11 ) |
同様の部品番号 - KM44C4005C |
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同様の説明 - KM44C4005C |
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